JPS5630729A - Formation of thin film pattern - Google Patents

Formation of thin film pattern

Info

Publication number
JPS5630729A
JPS5630729A JP10697479A JP10697479A JPS5630729A JP S5630729 A JPS5630729 A JP S5630729A JP 10697479 A JP10697479 A JP 10697479A JP 10697479 A JP10697479 A JP 10697479A JP S5630729 A JPS5630729 A JP S5630729A
Authority
JP
Japan
Prior art keywords
thin film
film
pattern
sputter
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10697479A
Other languages
English (en)
Inventor
Takashi Kawai
Yuzo Ozaki
Haruo Hosomatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Yokogawa Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp, Yokogawa Electric Works Ltd filed Critical Yokogawa Hokushin Electric Corp
Priority to JP10697479A priority Critical patent/JPS5630729A/ja
Publication of JPS5630729A publication Critical patent/JPS5630729A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP10697479A 1979-08-22 1979-08-22 Formation of thin film pattern Pending JPS5630729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10697479A JPS5630729A (en) 1979-08-22 1979-08-22 Formation of thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10697479A JPS5630729A (en) 1979-08-22 1979-08-22 Formation of thin film pattern

Publications (1)

Publication Number Publication Date
JPS5630729A true JPS5630729A (en) 1981-03-27

Family

ID=14447257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10697479A Pending JPS5630729A (en) 1979-08-22 1979-08-22 Formation of thin film pattern

Country Status (1)

Country Link
JP (1) JPS5630729A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201020A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Reactive sputter etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983764A (ja) * 1972-12-15 1974-08-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983764A (ja) * 1972-12-15 1974-08-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201020A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Reactive sputter etching method

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