JPS5629375A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5629375A
JPS5629375A JP10529179A JP10529179A JPS5629375A JP S5629375 A JPS5629375 A JP S5629375A JP 10529179 A JP10529179 A JP 10529179A JP 10529179 A JP10529179 A JP 10529179A JP S5629375 A JPS5629375 A JP S5629375A
Authority
JP
Japan
Prior art keywords
type
regions
layer
film
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10529179A
Other languages
Japanese (ja)
Inventor
Kosei Kajiwara
Kazutoshi Nagano
Kosuke Yasuno
Tatsunori Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10529179A priority Critical patent/JPS5629375A/en
Publication of JPS5629375A publication Critical patent/JPS5629375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain the FET suitable for the high frequency operation by not forming the source, drain, and gate regions directly in an epitaxial layer which is grown on a semiconductor substrate; but forming them in the island regions provided in the epitaxial layer; in preparing the J-FET. CONSTITUTION:An N type layer 41 is grown on a P<+> type Si substrate 30 by a pressure reduced epitaxial method in order to decrease the autodoping, and the surface is covered by an oxide film 42 by the CVD method. Holes 43 and 44 are provided, P type regions 45 and 46 reaching the substrate 30 are diffused and formed, and the layer 41 is separated. Then, holes are perforated in a layer 47 which is formed with the film 42 being included at the same time, and a shallow N type island region 34 is formed in the separated layer 41 by the ion implantation. Thereafter, the film 47 is transformed into a film 50, windows are provided, and P type gate regions 12, 14, and 16 are diffused and formed in the region 34. Windows are provided in a film 51 which is formed at the same time, and N<+> type source regions 11 and 15 and drain regions 13 and 17 which are located between the gate regions are diffused and formed. Thus, the mutual conductance is increased.
JP10529179A 1979-08-17 1979-08-17 Field effect transistor Pending JPS5629375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10529179A JPS5629375A (en) 1979-08-17 1979-08-17 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10529179A JPS5629375A (en) 1979-08-17 1979-08-17 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5629375A true JPS5629375A (en) 1981-03-24

Family

ID=14403572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10529179A Pending JPS5629375A (en) 1979-08-17 1979-08-17 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5629375A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437583A (en) * 1977-08-29 1979-03-20 Nec Corp Field effect transistor of junction type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437583A (en) * 1977-08-29 1979-03-20 Nec Corp Field effect transistor of junction type

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