JPS5629361A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5629361A
JPS5629361A JP10531179A JP10531179A JPS5629361A JP S5629361 A JPS5629361 A JP S5629361A JP 10531179 A JP10531179 A JP 10531179A JP 10531179 A JP10531179 A JP 10531179A JP S5629361 A JPS5629361 A JP S5629361A
Authority
JP
Japan
Prior art keywords
layer
type
gate
film
short channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10531179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6231508B2 (en, 2012
Inventor
Hideaki Sadamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10531179A priority Critical patent/JPS5629361A/ja
Publication of JPS5629361A publication Critical patent/JPS5629361A/ja
Publication of JPS6231508B2 publication Critical patent/JPS6231508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10531179A 1979-08-17 1979-08-17 Manufacture of semiconductor integrated circuit Granted JPS5629361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10531179A JPS5629361A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10531179A JPS5629361A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5629361A true JPS5629361A (en) 1981-03-24
JPS6231508B2 JPS6231508B2 (en, 2012) 1987-07-08

Family

ID=14404150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10531179A Granted JPS5629361A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5629361A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6451510U (en, 2012) * 1987-09-28 1989-03-30

Also Published As

Publication number Publication date
JPS6231508B2 (en, 2012) 1987-07-08

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