JPS562650A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS562650A
JPS562650A JP7769879A JP7769879A JPS562650A JP S562650 A JPS562650 A JP S562650A JP 7769879 A JP7769879 A JP 7769879A JP 7769879 A JP7769879 A JP 7769879A JP S562650 A JPS562650 A JP S562650A
Authority
JP
Japan
Prior art keywords
ion
emitter
film
diffusion
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7769879A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7769879A priority Critical patent/JPS562650A/en
Publication of JPS562650A publication Critical patent/JPS562650A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain bipolar semiconductor IC's having good yield by a method wherein the progress of manufacturing work by the ion implantation is simplified and the abnormal diffusion is prevented. CONSTITUTION:An n-epitaxial layer 3 is put upon a P-type Si substrate 1 having an n<+>-buried layer 2 and is covered with an Si3N4 film 4, and an SiO2 films 5 are formed making openings selectively. In succession, B ion and P ion are implanted 8, 9 selectively through the film 4, and is annealed to form isolation layers 10 and collector connecting layers 11. Then the Si3N4 film 4 is removed and is covered with an SiO2 thin film 12, and the ordinary diffusion of base and emitter are performed by the ion implantation. By this way, the short-circuiting phenomenon between the emitter and the collector due to the abnormally accelerated diffusion of impurity into the defect of crystal caused by the dislocation in the emitter region, etc., is sharply reduced finally, and bipolar IC's can be produced with high yield.
JP7769879A 1979-06-20 1979-06-20 Manufacture of semiconductor device Pending JPS562650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7769879A JPS562650A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7769879A JPS562650A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS562650A true JPS562650A (en) 1981-01-12

Family

ID=13641106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7769879A Pending JPS562650A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS562650A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856434A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856434A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Manufacture of semiconductor device
JPS6252950B2 (en) * 1981-09-30 1987-11-07 Fujitsu Ltd

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