JPS56162878A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS56162878A
JPS56162878A JP6881681A JP6881681A JPS56162878A JP S56162878 A JPS56162878 A JP S56162878A JP 6881681 A JP6881681 A JP 6881681A JP 6881681 A JP6881681 A JP 6881681A JP S56162878 A JPS56162878 A JP S56162878A
Authority
JP
Japan
Prior art keywords
substrate
layer
approx
film
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6881681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0217941B2 (enrdf_load_stackoverflow
Inventor
Osanori Nishida
Masashige Aoyama
Hiroshi Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP6881681A priority Critical patent/JPS56162878A/ja
Publication of JPS56162878A publication Critical patent/JPS56162878A/ja
Publication of JPH0217941B2 publication Critical patent/JPH0217941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP6881681A 1981-05-06 1981-05-06 Insulated gate type field effect semiconductor device Granted JPS56162878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6881681A JPS56162878A (en) 1981-05-06 1981-05-06 Insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6881681A JPS56162878A (en) 1981-05-06 1981-05-06 Insulated gate type field effect semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5807080A Division JPS56155572A (en) 1980-04-30 1980-04-30 Insulated gate field effect type semiconductor device

Publications (2)

Publication Number Publication Date
JPS56162878A true JPS56162878A (en) 1981-12-15
JPH0217941B2 JPH0217941B2 (enrdf_load_stackoverflow) 1990-04-24

Family

ID=13384608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6881681A Granted JPS56162878A (en) 1981-05-06 1981-05-06 Insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162878A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0217941B2 (enrdf_load_stackoverflow) 1990-04-24

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