JPS56162839A - Silicon etchant and etching method for silicon single crystal using the same - Google Patents
Silicon etchant and etching method for silicon single crystal using the sameInfo
- Publication number
- JPS56162839A JPS56162839A JP6676980A JP6676980A JPS56162839A JP S56162839 A JPS56162839 A JP S56162839A JP 6676980 A JP6676980 A JP 6676980A JP 6676980 A JP6676980 A JP 6676980A JP S56162839 A JPS56162839 A JP S56162839A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- etchant
- plane
- same
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000004094 surface-active agent Substances 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56162839A true JPS56162839A (en) | 1981-12-15 |
| JPH0243333B2 JPH0243333B2 (enrdf_load_stackoverflow) | 1990-09-28 |
Family
ID=13325408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6676980A Granted JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56162839A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855323A (ja) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | シリコン及びシリコン酸化膜の腐食液 |
| KR100612985B1 (ko) * | 1998-03-12 | 2006-10-31 | 삼성전자주식회사 | 액정 표시 장치의 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50134770A (enrdf_load_stackoverflow) * | 1974-04-15 | 1975-10-25 | ||
| JPS50147281A (enrdf_load_stackoverflow) * | 1974-05-15 | 1975-11-26 |
-
1980
- 1980-05-19 JP JP6676980A patent/JPS56162839A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50134770A (enrdf_load_stackoverflow) * | 1974-04-15 | 1975-10-25 | ||
| JPS50147281A (enrdf_load_stackoverflow) * | 1974-05-15 | 1975-11-26 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855323A (ja) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | シリコン及びシリコン酸化膜の腐食液 |
| KR100612985B1 (ko) * | 1998-03-12 | 2006-10-31 | 삼성전자주식회사 | 액정 표시 장치의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0243333B2 (enrdf_load_stackoverflow) | 1990-09-28 |
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