JPS56158496A - Manufacture of injection type laser - Google Patents

Manufacture of injection type laser

Info

Publication number
JPS56158496A
JPS56158496A JP6248680A JP6248680A JPS56158496A JP S56158496 A JPS56158496 A JP S56158496A JP 6248680 A JP6248680 A JP 6248680A JP 6248680 A JP6248680 A JP 6248680A JP S56158496 A JPS56158496 A JP S56158496A
Authority
JP
Japan
Prior art keywords
ingaasp
inp
injection type
type laser
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6248680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214116B2 (enrdf_load_stackoverflow
Inventor
Wataru Suzaki
Toshio Murotani
Etsuji Omura
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6248680A priority Critical patent/JPS56158496A/ja
Publication of JPS56158496A publication Critical patent/JPS56158496A/ja
Publication of JPS6214116B2 publication Critical patent/JPS6214116B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP6248680A 1980-05-09 1980-05-09 Manufacture of injection type laser Granted JPS56158496A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6248680A JPS56158496A (en) 1980-05-09 1980-05-09 Manufacture of injection type laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6248680A JPS56158496A (en) 1980-05-09 1980-05-09 Manufacture of injection type laser

Publications (2)

Publication Number Publication Date
JPS56158496A true JPS56158496A (en) 1981-12-07
JPS6214116B2 JPS6214116B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=13201549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6248680A Granted JPS56158496A (en) 1980-05-09 1980-05-09 Manufacture of injection type laser

Country Status (1)

Country Link
JP (1) JPS56158496A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675710A (en) * 1981-03-31 1987-06-23 Fujitsu Limited Light emitting semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675710A (en) * 1981-03-31 1987-06-23 Fujitsu Limited Light emitting semiconductor device

Also Published As

Publication number Publication date
JPS6214116B2 (enrdf_load_stackoverflow) 1987-03-31

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