JPS57139983A - Buried double heterojunction laser element - Google Patents

Buried double heterojunction laser element

Info

Publication number
JPS57139983A
JPS57139983A JP2583581A JP2583581A JPS57139983A JP S57139983 A JPS57139983 A JP S57139983A JP 2583581 A JP2583581 A JP 2583581A JP 2583581 A JP2583581 A JP 2583581A JP S57139983 A JPS57139983 A JP S57139983A
Authority
JP
Japan
Prior art keywords
layer
ingaasp
substrate
semiconductor laser
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2583581A
Other languages
Japanese (ja)
Other versions
JPS6124839B2 (en
Inventor
Akira Suzuki
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2583581A priority Critical patent/JPS57139983A/en
Publication of JPS57139983A publication Critical patent/JPS57139983A/en
Publication of JPS6124839B2 publication Critical patent/JPS6124839B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form a semiconductor laser for wave length multiplex communication easily by a method wherein at mesa stripe regions which have different widths to each other on a substrate, active layers with differnt forbidden band widths are provided and a clad layer which buries them is provided. CONSTITUTION:Mesa stripe regions 1a-1c which have different widths to each other are provided and controlled by a degree of super cooling, and the first InGaAsP active layer 2 (0.79eV) is grown solely on the mesa region 1a, and subsequently after the second InGaAsP layer 3 (0.95eV) and the third InGaAsP layer 4 (1.13eV) are grown sequentially in the same way, a P type InP layer 7 and a P type InGaAsP layer 8 are provided. Thereby a semiconductor laser which has different oscillation wavelengths is obtained on one substrate by a single liquid phase epitaxial growth process.
JP2583581A 1981-02-24 1981-02-24 Buried double heterojunction laser element Granted JPS57139983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2583581A JPS57139983A (en) 1981-02-24 1981-02-24 Buried double heterojunction laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2583581A JPS57139983A (en) 1981-02-24 1981-02-24 Buried double heterojunction laser element

Publications (2)

Publication Number Publication Date
JPS57139983A true JPS57139983A (en) 1982-08-30
JPS6124839B2 JPS6124839B2 (en) 1986-06-12

Family

ID=12176910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2583581A Granted JPS57139983A (en) 1981-02-24 1981-02-24 Buried double heterojunction laser element

Country Status (1)

Country Link
JP (1) JPS57139983A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165487A (en) * 1983-03-09 1984-09-18 Sharp Corp Semiconductor laser array element
EP0194141A2 (en) * 1985-03-06 1986-09-10 Sharp Kabushiki Kaisha A semiconductor laser
JPS63181493A (en) * 1987-01-23 1988-07-26 Matsushita Electric Ind Co Ltd Semiconductor laser array device
US5436193A (en) * 1993-11-02 1995-07-25 Xerox Corporation Method of fabricating a stacked active region laser array

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165487A (en) * 1983-03-09 1984-09-18 Sharp Corp Semiconductor laser array element
JPH046113B2 (en) * 1983-03-09 1992-02-04 Sharp Kk
EP0194141A2 (en) * 1985-03-06 1986-09-10 Sharp Kabushiki Kaisha A semiconductor laser
US4771432A (en) * 1985-03-06 1988-09-13 Sharp Kabushiki Kaisha Semiconductor laser which reduces the coherency of the oscillation spectrum
JPS63181493A (en) * 1987-01-23 1988-07-26 Matsushita Electric Ind Co Ltd Semiconductor laser array device
US5436193A (en) * 1993-11-02 1995-07-25 Xerox Corporation Method of fabricating a stacked active region laser array

Also Published As

Publication number Publication date
JPS6124839B2 (en) 1986-06-12

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