JPS56158461A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPS56158461A
JPS56158461A JP6228980A JP6228980A JPS56158461A JP S56158461 A JPS56158461 A JP S56158461A JP 6228980 A JP6228980 A JP 6228980A JP 6228980 A JP6228980 A JP 6228980A JP S56158461 A JPS56158461 A JP S56158461A
Authority
JP
Japan
Prior art keywords
epoxy
hardening
resin
semiconductor device
chemical compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6228980A
Other languages
Japanese (ja)
Inventor
Akira Yoshizumi
Michiya Azuma
Shiyuichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6228980A priority Critical patent/JPS56158461A/en
Publication of JPS56158461A publication Critical patent/JPS56158461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor device having excellent dampproof and corrosion resisting properties by a method wherein phenol novolak hardening epoxy resin is used as a resin forming material, to be used for sealing of a semiconductor element, and the chemical compound expressed by a common formula is used as a hardening accelerator. CONSTITUTION:The epoxy resin has two or more epoxy groups in a molecule and the chemical compound having the epoxy equivalent of 250 and a softening point of 70-120 deg.C is used by excluding the impurities such as Na and the like as much as possible. It is desirable that the phenol novolak resin, to be used as a hardenerm, has the hardening point of 70-110 deg.C and the unreactioned monomer of less than 0.7%, and is used at the rate of 0.5-2 of phenol hydroxyle group to one epoxy group. For the above resin composition, the hardening accelerator which is represented by the common formula of 0.05-8wt% is added and as occasion demands, a flame resisting agent, a filler, a mold releasing agent and the like are added and used as the sealing material. Through these procedures, the device having far more excellent dampproof and corrosion resisting properties and a high reliability to the device using the third grade amiko type accelerator, can be obtained.
JP6228980A 1980-05-13 1980-05-13 Resin sealed semiconductor device Pending JPS56158461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6228980A JPS56158461A (en) 1980-05-13 1980-05-13 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6228980A JPS56158461A (en) 1980-05-13 1980-05-13 Resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158461A true JPS56158461A (en) 1981-12-07

Family

ID=13195806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6228980A Pending JPS56158461A (en) 1980-05-13 1980-05-13 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158461A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0315755A2 (en) * 1987-09-24 1989-05-17 BASF Aktiengesellschaft Latent catalysts for heat curable resins

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0315755A2 (en) * 1987-09-24 1989-05-17 BASF Aktiengesellschaft Latent catalysts for heat curable resins
EP0315755A3 (en) * 1987-09-24 1989-06-14 BASF Aktiengesellschaft Latent catalysts for heat curable resins
JPH0292921A (en) * 1987-09-24 1990-04-03 Basf Corp Latent catalyst for thermosetting resin

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