JPS56158421A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56158421A JPS56158421A JP6245380A JP6245380A JPS56158421A JP S56158421 A JPS56158421 A JP S56158421A JP 6245380 A JP6245380 A JP 6245380A JP 6245380 A JP6245380 A JP 6245380A JP S56158421 A JPS56158421 A JP S56158421A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- formation
- alloy
- heat treatment
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a resistive contact by exposing the electrode formation section of a semiconductor substrate to provide a porous formation film wherein the formation film is removed and a metallic layer is coated and covered on the substrate and heat treatment is applied to alloy the substrate. CONSTITUTION:A base 2 and an emmiter 3 are composed on an Si substrate 1 and openings are provided at SiO2 4 by a resist mask 5. Positive oxidization is applied to the substrate 1 in an oxalic acid solution to form a porous oxide film 7. Then, the substrate 1 is immersed in a solution of hydrofluoric acid : pure water =1:50 and the oxide film 7 is removed. Then, the substrate surface becomes a fine uneven surface 8. The mask 5 is removed and Al 9 is evaporated for patterning and an electrode is formed. The formation of alloy surely and sufficiently proceeds by heat treatment as the substrate surface forms the fine uneven surface 8 and complete resistive contact can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6245380A JPS56158421A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6245380A JPS56158421A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56158421A true JPS56158421A (en) | 1981-12-07 |
Family
ID=13200633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6245380A Pending JPS56158421A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56158421A (en) |
-
1980
- 1980-05-12 JP JP6245380A patent/JPS56158421A/en active Pending
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