JPS56155095A - Growing method of single crystal - Google Patents

Growing method of single crystal

Info

Publication number
JPS56155095A
JPS56155095A JP5649380A JP5649380A JPS56155095A JP S56155095 A JPS56155095 A JP S56155095A JP 5649380 A JP5649380 A JP 5649380A JP 5649380 A JP5649380 A JP 5649380A JP S56155095 A JPS56155095 A JP S56155095A
Authority
JP
Japan
Prior art keywords
crystal
seed crystal
single crystal
melt
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5649380A
Other languages
Japanese (ja)
Inventor
Shigeru Yasuami
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5649380A priority Critical patent/JPS56155095A/en
Publication of JPS56155095A publication Critical patent/JPS56155095A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: When a single crystal is grown by the Chokralsky method, at the beginning of the crystal growth, the tip of the seed crystal is purified with an operation corresponding to remelting, then the crystal is lifted up, thus producing a good- quality single crystal.
CONSTITUTION: The raw material for the single crystal is melted in the crucible 2 and the seed crystal 5 is brought into contact with the melt 3 and lifted up to produce a grown single crystal 6 wherein at the beginning the seed crystal 5 is stopped under contact with the melt 3, the amount of heat fed is increased to melt the seed crystal 5 by a certain distance upward from the surface of the melt and this state is kept for a certain time. Thus, the transformation defects and crystal defects at the solid-liquid interface of the seed crystal 5 are expelled in the direction perpendicular to the drawing-up direction. Then, the seed crystal is drawn up by a certain distance under keeping the same diameter as that of the seed crystal and the system is restored to the usual conditions, then the routin lifting is conducted to produce the grown single crystal 6 with small transformation density and defect density.
COPYRIGHT: (C)1981,JPO&Japio
JP5649380A 1980-04-28 1980-04-28 Growing method of single crystal Pending JPS56155095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5649380A JPS56155095A (en) 1980-04-28 1980-04-28 Growing method of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5649380A JPS56155095A (en) 1980-04-28 1980-04-28 Growing method of single crystal

Publications (1)

Publication Number Publication Date
JPS56155095A true JPS56155095A (en) 1981-12-01

Family

ID=13028612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5649380A Pending JPS56155095A (en) 1980-04-28 1980-04-28 Growing method of single crystal

Country Status (1)

Country Link
JP (1) JPS56155095A (en)

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