JPS56153761A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56153761A
JPS56153761A JP5677180A JP5677180A JPS56153761A JP S56153761 A JPS56153761 A JP S56153761A JP 5677180 A JP5677180 A JP 5677180A JP 5677180 A JP5677180 A JP 5677180A JP S56153761 A JPS56153761 A JP S56153761A
Authority
JP
Japan
Prior art keywords
substrate
film
implanted
psg
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5677180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129151B2 (enrdf_load_stackoverflow
Inventor
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5677180A priority Critical patent/JPS56153761A/ja
Publication of JPS56153761A publication Critical patent/JPS56153761A/ja
Publication of JPS6129151B2 publication Critical patent/JPS6129151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP5677180A 1980-04-28 1980-04-28 Manufacture of semiconductor device Granted JPS56153761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5677180A JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5677180A JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56153761A true JPS56153761A (en) 1981-11-27
JPS6129151B2 JPS6129151B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=13036734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5677180A Granted JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56153761A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184556A (ja) * 1983-04-04 1984-10-19 Nec Corp 半導体集積回路
JPS62141757A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184556A (ja) * 1983-04-04 1984-10-19 Nec Corp 半導体集積回路
JPS62141757A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPS6129151B2 (enrdf_load_stackoverflow) 1986-07-04

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