JPS56150880A - Gallium nitride light emitting element chip and manufacture thereof - Google Patents

Gallium nitride light emitting element chip and manufacture thereof

Info

Publication number
JPS56150880A
JPS56150880A JP5451880A JP5451880A JPS56150880A JP S56150880 A JPS56150880 A JP S56150880A JP 5451880 A JP5451880 A JP 5451880A JP 5451880 A JP5451880 A JP 5451880A JP S56150880 A JPS56150880 A JP S56150880A
Authority
JP
Japan
Prior art keywords
type
grown
crystal
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5451880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138875B2 (enrdf_load_stackoverflow
Inventor
Yoshimasa Oki
Yukio Toyoda
Atsuyuki Kobayashi
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5451880A priority Critical patent/JPS56150880A/ja
Priority to US06/199,097 priority patent/US4396929A/en
Publication of JPS56150880A publication Critical patent/JPS56150880A/ja
Priority to US06/480,794 priority patent/US4476620A/en
Publication of JPS6138875B2 publication Critical patent/JPS6138875B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
JP5451880A 1979-10-19 1980-04-23 Gallium nitride light emitting element chip and manufacture thereof Granted JPS56150880A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5451880A JPS56150880A (en) 1980-04-23 1980-04-23 Gallium nitride light emitting element chip and manufacture thereof
US06/199,097 US4396929A (en) 1979-10-19 1980-10-20 Gallium nitride light-emitting element and method of manufacturing the same
US06/480,794 US4476620A (en) 1979-10-19 1983-03-31 Method of making a gallium nitride light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5451880A JPS56150880A (en) 1980-04-23 1980-04-23 Gallium nitride light emitting element chip and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56150880A true JPS56150880A (en) 1981-11-21
JPS6138875B2 JPS6138875B2 (enrdf_load_stackoverflow) 1986-09-01

Family

ID=12972862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5451880A Granted JPS56150880A (en) 1979-10-19 1980-04-23 Gallium nitride light emitting element chip and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56150880A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JP2011171639A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 半導体装置、半導体ウェハ、半導体装置の製造方法及び半導体ウェハの製造方法
JP2015503215A (ja) * 2011-10-26 2015-01-29 アンヴィル セミコンダクターズ リミテッド 炭化ケイ素エピタキシャル成長法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JP2011171639A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 半導体装置、半導体ウェハ、半導体装置の製造方法及び半導体ウェハの製造方法
JP2015503215A (ja) * 2011-10-26 2015-01-29 アンヴィル セミコンダクターズ リミテッド 炭化ケイ素エピタキシャル成長法
US9520285B2 (en) 2011-10-26 2016-12-13 Anvil Semiconductors Limited Silicon carbide epitaxy

Also Published As

Publication number Publication date
JPS6138875B2 (enrdf_load_stackoverflow) 1986-09-01

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