JPS5615035A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5615035A
JPS5615035A JP8991779A JP8991779A JPS5615035A JP S5615035 A JPS5615035 A JP S5615035A JP 8991779 A JP8991779 A JP 8991779A JP 8991779 A JP8991779 A JP 8991779A JP S5615035 A JPS5615035 A JP S5615035A
Authority
JP
Japan
Prior art keywords
mask
layer
junction
laser light
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8991779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS633447B2 (enrdf_load_stackoverflow
Inventor
Mitsunori Ketsusako
Haruo Ito
Tadashi Saito
Nobuo Nakamura
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8991779A priority Critical patent/JPS5615035A/ja
Publication of JPS5615035A publication Critical patent/JPS5615035A/ja
Publication of JPS633447B2 publication Critical patent/JPS633447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP8991779A 1979-07-17 1979-07-17 Manufacture of semiconductor device Granted JPS5615035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5615035A true JPS5615035A (en) 1981-02-13
JPS633447B2 JPS633447B2 (enrdf_load_stackoverflow) 1988-01-23

Family

ID=13984051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8991779A Granted JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615035A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136368A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of mis transistor
JPS57138157A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Manufacture of semiconductor device
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
JP2011512041A (ja) * 2008-04-17 2011-04-14 エルジー エレクトロニクス インコーポレイティド 太陽電池、太陽電池のエミッタ層形成方法及び太陽電池の製造方法
CN102447004A (zh) * 2010-09-30 2012-05-09 Snt能源技术有限公司 形成太阳能电池的选择性发射极的掩模、方法和设备
JP2014072474A (ja) * 2012-10-01 2014-04-21 Sharp Corp 光電変換素子の製造方法及び光電変換素子
JP2015515747A (ja) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ めっきされたコンタクトを有する太陽電池の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (enrdf_load_stackoverflow) * 1972-07-11 1974-03-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (enrdf_load_stackoverflow) * 1972-07-11 1974-03-08

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136368A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of mis transistor
JPS57138157A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Manufacture of semiconductor device
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
JP2011512041A (ja) * 2008-04-17 2011-04-14 エルジー エレクトロニクス インコーポレイティド 太陽電池、太陽電池のエミッタ層形成方法及び太陽電池の製造方法
US8513754B2 (en) 2008-04-17 2013-08-20 Lg Electronics Inc. Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell
CN102447004A (zh) * 2010-09-30 2012-05-09 Snt能源技术有限公司 形成太阳能电池的选择性发射极的掩模、方法和设备
JP2015515747A (ja) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ めっきされたコンタクトを有する太陽電池の製造方法
JP2014072474A (ja) * 2012-10-01 2014-04-21 Sharp Corp 光電変換素子の製造方法及び光電変換素子

Also Published As

Publication number Publication date
JPS633447B2 (enrdf_load_stackoverflow) 1988-01-23

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