JPS56150339A - Nitrogen oxide detecting element using thin film of platinum - Google Patents

Nitrogen oxide detecting element using thin film of platinum

Info

Publication number
JPS56150339A
JPS56150339A JP4920780A JP4920780A JPS56150339A JP S56150339 A JPS56150339 A JP S56150339A JP 4920780 A JP4920780 A JP 4920780A JP 4920780 A JP4920780 A JP 4920780A JP S56150339 A JPS56150339 A JP S56150339A
Authority
JP
Japan
Prior art keywords
thin film
platinum
semiconductor
thence
detecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4920780A
Other languages
Japanese (ja)
Inventor
Yoshio Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAAKU KK
Original Assignee
KAAKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAAKU KK filed Critical KAAKU KK
Priority to JP4920780A priority Critical patent/JPS56150339A/en
Priority to US06/248,179 priority patent/US4396899A/en
Priority to DE8181102856T priority patent/DE3169227D1/en
Priority to DE8282102641T priority patent/DE3167758D1/en
Priority to EP19810102856 priority patent/EP0038078B1/en
Priority to EP19820102641 priority patent/EP0063264B1/en
Publication of JPS56150339A publication Critical patent/JPS56150339A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To improve stability and reproducibility by sticking an oxide semiconductor film of V2O5-Sm2O3-Ag type over the entire surface of a thin film resistor of platinum. CONSTITUTION:Oxide of rear earths, AgNO3 and water are added to V2O5, and after the mixture is kneaded to the form of paste followed by drying, it is ground and the powder is put in a crucible where it is calcined, whereby semiconductor powder is produced. Thence, said semiconductor is stuck uniformly as a thin film or thick film over the entire surface of a thin film resistor of platinum by a sputtering or coating method while rotating. Next, it is subjected to thermal aging sufficiently to stabilize, thence it is combined with a heater and the assembly is welded onto a stem, whereby the sensor is made. The stabler sensor is obtained if it is further subjected to electroaging for a number of days.
JP4920780A 1980-04-16 1980-04-16 Nitrogen oxide detecting element using thin film of platinum Pending JPS56150339A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP4920780A JPS56150339A (en) 1980-04-16 1980-04-16 Nitrogen oxide detecting element using thin film of platinum
US06/248,179 US4396899A (en) 1980-04-16 1981-03-30 Platinum thin film resistance element and production method therefor
DE8181102856T DE3169227D1 (en) 1980-04-16 1981-04-14 Gas sensor
DE8282102641T DE3167758D1 (en) 1980-04-16 1981-04-14 Method for the manufacture of a temperature sensitive platinum thin film resistance element
EP19810102856 EP0038078B1 (en) 1980-04-16 1981-04-14 Gas sensor
EP19820102641 EP0063264B1 (en) 1980-04-16 1981-04-14 Method for the manufacture of a temperature sensitive platinum thin film resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4920780A JPS56150339A (en) 1980-04-16 1980-04-16 Nitrogen oxide detecting element using thin film of platinum

Publications (1)

Publication Number Publication Date
JPS56150339A true JPS56150339A (en) 1981-11-20

Family

ID=12824527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4920780A Pending JPS56150339A (en) 1980-04-16 1980-04-16 Nitrogen oxide detecting element using thin film of platinum

Country Status (1)

Country Link
JP (1) JPS56150339A (en)

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