JPS56147447A - Manufacture of mosic - Google Patents
Manufacture of mosicInfo
- Publication number
- JPS56147447A JPS56147447A JP5118080A JP5118080A JPS56147447A JP S56147447 A JPS56147447 A JP S56147447A JP 5118080 A JP5118080 A JP 5118080A JP 5118080 A JP5118080 A JP 5118080A JP S56147447 A JPS56147447 A JP S56147447A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- active region
- resist
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5118080A JPS56147447A (en) | 1980-04-17 | 1980-04-17 | Manufacture of mosic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5118080A JPS56147447A (en) | 1980-04-17 | 1980-04-17 | Manufacture of mosic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56147447A true JPS56147447A (en) | 1981-11-16 |
Family
ID=12879633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5118080A Pending JPS56147447A (en) | 1980-04-17 | 1980-04-17 | Manufacture of mosic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56147447A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292339A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
US5747354A (en) * | 1992-01-09 | 1998-05-05 | Nec Corporation | Semiconductor device having an improved anti-radioactivity and method of fabricating the same |
-
1980
- 1980-04-17 JP JP5118080A patent/JPS56147447A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292339A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
US5747354A (en) * | 1992-01-09 | 1998-05-05 | Nec Corporation | Semiconductor device having an improved anti-radioactivity and method of fabricating the same |
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