JPS5614499A - Si pellet bonding method - Google Patents
Si pellet bonding methodInfo
- Publication number
- JPS5614499A JPS5614499A JP8508379A JP8508379A JPS5614499A JP S5614499 A JPS5614499 A JP S5614499A JP 8508379 A JP8508379 A JP 8508379A JP 8508379 A JP8508379 A JP 8508379A JP S5614499 A JPS5614499 A JP S5614499A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pellet
- pellets
- eutectic alloy
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To enable Si pellets to be airtightly bonded to each other with an Au/Si eutectic alloy layer without being blocked by Si oxide by forming a middle layer for preventing the alternate diffusion of Au and Si between one of the pellets and an Au layer.
CONSTITUTION: When Si pellet 1 and Si pellet 6 are bonded to each other with Au/Si eutectic alloy 10, on the surface of one pellet 6 ≥2,000Å thick middle layer 32 of Al, In or the like and ≥2,000Å thick Ni middle layer 33 are formed by sputtering in this order. An SiO2-Ni layer may be used. After forming Au layer 26 on the other pellet 1 by a similar method, pellets 1, 6 are superposed, heated, and press bonded. Ni layer 33 prevents the alternate diffusion of Si and Au in the heating, so Si diffuses in Au layer 26 to form Au/Si eutectic alloy 10, resulting in perfect bonding.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508379A JPS5614499A (en) | 1979-07-06 | 1979-07-06 | Si pellet bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508379A JPS5614499A (en) | 1979-07-06 | 1979-07-06 | Si pellet bonding method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5614499A true JPS5614499A (en) | 1981-02-12 |
Family
ID=13848704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8508379A Pending JPS5614499A (en) | 1979-07-06 | 1979-07-06 | Si pellet bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5614499A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0552466A2 (en) * | 1992-01-24 | 1993-07-28 | Honda Giken Kogyo Kabushiki Kaisha | Method for joining semiconductor substrates |
JP2017218360A (en) * | 2016-06-10 | 2017-12-14 | 日本新工芯技株式会社 | Production method of regenerated silicon member |
-
1979
- 1979-07-06 JP JP8508379A patent/JPS5614499A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0552466A2 (en) * | 1992-01-24 | 1993-07-28 | Honda Giken Kogyo Kabushiki Kaisha | Method for joining semiconductor substrates |
JP2017218360A (en) * | 2016-06-10 | 2017-12-14 | 日本新工芯技株式会社 | Production method of regenerated silicon member |
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