JPS56144544A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56144544A JPS56144544A JP4808480A JP4808480A JPS56144544A JP S56144544 A JPS56144544 A JP S56144544A JP 4808480 A JP4808480 A JP 4808480A JP 4808480 A JP4808480 A JP 4808480A JP S56144544 A JPS56144544 A JP S56144544A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- production
- resist mask
- reactive sputtering
- defects caused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000005546 reactive sputtering Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56144544A true JPS56144544A (en) | 1981-11-10 |
JPS6257103B2 JPS6257103B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-11-30 |
Family
ID=12793451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4808480A Granted JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56144544A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH01290244A (ja) * | 1988-05-18 | 1989-11-22 | Sony Corp | 半導体装置の製造方法 |
-
1980
- 1980-04-14 JP JP4808480A patent/JPS56144544A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH01290244A (ja) * | 1988-05-18 | 1989-11-22 | Sony Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6257103B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-11-30 |
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