JPS5613729A - Drying method for semiconductor wafer - Google Patents

Drying method for semiconductor wafer

Info

Publication number
JPS5613729A
JPS5613729A JP8928879A JP8928879A JPS5613729A JP S5613729 A JPS5613729 A JP S5613729A JP 8928879 A JP8928879 A JP 8928879A JP 8928879 A JP8928879 A JP 8928879A JP S5613729 A JPS5613729 A JP S5613729A
Authority
JP
Japan
Prior art keywords
alcohol
water
drying
vapor
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8928879A
Other languages
Japanese (ja)
Inventor
Fumio Kiyozumi
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8928879A priority Critical patent/JPS5613729A/en
Publication of JPS5613729A publication Critical patent/JPS5613729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent the adhesion of pollutants by a method wherein a semiconductor wafer after washing it by water is immersed in alcohol, and dried with isopropyl alcohol vapor or freon vapor or by means of spin. CONSTITUTION:A cohesion adhering phenomenon of organic matter happens because water is repelled and waterdrops are easy to be formed in concave portions when the surface of a wafer is hydrophobic. Thus, it is preferable that the wafer is washed by water and immersed in alcohol, waterdrops on the surface are replaced with alcohol, and the whole surface is rapidly dried under a condition that is moistened with alcohol. As drying methods, drying by isopropyl alcohol vapor is optimum, but drying by freon vapor or drying by means of spin is also effective. As alcohol after wahsing by water, isopropyl alcohol and ethyl alcohol are adequate, and methyl alcohol easy to volatilize is inadequate. This constitution can improve the characteristics of a semiconductor device because pollution due to impurities is prevented.
JP8928879A 1979-07-16 1979-07-16 Drying method for semiconductor wafer Pending JPS5613729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8928879A JPS5613729A (en) 1979-07-16 1979-07-16 Drying method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8928879A JPS5613729A (en) 1979-07-16 1979-07-16 Drying method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5613729A true JPS5613729A (en) 1981-02-10

Family

ID=13966504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8928879A Pending JPS5613729A (en) 1979-07-16 1979-07-16 Drying method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5613729A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56168072A (en) * 1980-05-30 1981-12-24 Hitachi Ltd Steam drying method and apparatus
JPS5850740A (en) * 1981-09-21 1983-03-25 Hitachi Ltd Semiconductor treatment apparatus
JPH0278467A (en) * 1988-07-13 1990-03-19 Wacker Chemitronic Ges Elektron Grundstoffe Mbh Protection for surface of silicon wafer
EP0398806A2 (en) * 1989-05-17 1990-11-22 Fujitsu Limited Method of fabricating a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932857U (en) * 1972-06-26 1974-03-22
JPS5040946A (en) * 1973-04-13 1975-04-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932857U (en) * 1972-06-26 1974-03-22
JPS5040946A (en) * 1973-04-13 1975-04-15

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56168072A (en) * 1980-05-30 1981-12-24 Hitachi Ltd Steam drying method and apparatus
JPS5850740A (en) * 1981-09-21 1983-03-25 Hitachi Ltd Semiconductor treatment apparatus
JPH0278467A (en) * 1988-07-13 1990-03-19 Wacker Chemitronic Ges Elektron Grundstoffe Mbh Protection for surface of silicon wafer
EP0398806A2 (en) * 1989-05-17 1990-11-22 Fujitsu Limited Method of fabricating a semiconductor device
US4983548A (en) * 1989-05-17 1991-01-08 Fujitsu Limited Method of fabricating a semiconductor device including removal of electric charges

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