JPS56135931A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS56135931A
JPS56135931A JP4008480A JP4008480A JPS56135931A JP S56135931 A JPS56135931 A JP S56135931A JP 4008480 A JP4008480 A JP 4008480A JP 4008480 A JP4008480 A JP 4008480A JP S56135931 A JPS56135931 A JP S56135931A
Authority
JP
Japan
Prior art keywords
pattern
energy
photomask
substrate
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4008480A
Other languages
Japanese (ja)
Inventor
Makoto Nakase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4008480A priority Critical patent/JPS56135931A/en
Publication of JPS56135931A publication Critical patent/JPS56135931A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To improve controllability of the dimensions of the pattern of a resist film by providing an energy-ray sensitive resist film on a substrate and by utilizing a photomask having a liquid-crystal layer varying an energy-ray transmission rate of the opening of a mask pattern. CONSTITUTION:A transparent electrode 21 is provided on the upper surface of the semiconductor substrate 16 provided with the energy-ray sensitive resist film 20 on the surface thereof, the photomask 11 prepared by providing the mask pattern 14 and the liquid-crystal layer 15 of an electricity-sensitive field (or voltage-sensitive field) on a glass substrate 12 through the intermediary of a pattern electrode 13 is arranged on the substrate 16, the energy-ray transmission rate of the opening parts A and B of the mask pattern is varied in a self-alignment manner by impressing an electric field between the electrodes 13 and 21, and exposure is performed by ultraviolet rays P and P'. Since a proper amount of exposure can be rendered to each region of the photoresist even having difference in levels by this constitution, a resist pattern having high fidelity to the photomask can be formed.
JP4008480A 1980-03-28 1980-03-28 Forming method for pattern Pending JPS56135931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4008480A JPS56135931A (en) 1980-03-28 1980-03-28 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4008480A JPS56135931A (en) 1980-03-28 1980-03-28 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS56135931A true JPS56135931A (en) 1981-10-23

Family

ID=12571024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4008480A Pending JPS56135931A (en) 1980-03-28 1980-03-28 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS56135931A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018500610A (en) * 2014-10-28 2018-01-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Mask plate and manufacturing method thereof, patterning method using mask plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018500610A (en) * 2014-10-28 2018-01-11 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Mask plate and manufacturing method thereof, patterning method using mask plate

Similar Documents

Publication Publication Date Title
JPS56135931A (en) Forming method for pattern
JPS56168654A (en) Photomask
JPS6464220A (en) Forming method for resist pattern
EP0098922A3 (en) Process for selectively generating positive and negative resist patterns from a single exposure pattern
JPS5461931A (en) Forming method of photo resist patterns
JPS5726467A (en) Manufacture of semiconductor device
JPS57190366A (en) Manufacture of semiconductor pressure sensor
JPS54141573A (en) Mask for exposure
JPS5742043A (en) Photosensitive material
JPS57172750A (en) Manufacture of semiconductor device
JPS5339060A (en) Lot number marking method to wafers
JPS5710232A (en) Forming method for resist pattern
JPS5724538A (en) Preparation of semiconductor device
JPS5732635A (en) Production of semiconductor device
JPS60208834A (en) Formation of pattern
JPS56133873A (en) Manufacture of semiconductor device
JPS57112025A (en) Formation of pattern
JPS57105739A (en) Production of mask
JPS5558534A (en) Manufacture of semiconductor device
JPS56110232A (en) Pattern formation with soft x-ray
JPS55142348A (en) Manufacture of printing plate for lithography
JPS56165244A (en) Manufacture of multilayer thin film electrode
JPS5769783A (en) Formation of multilayer thin film pattern
JPS57118641A (en) Lifting-off method
JPS5758317A (en) Method for forming pattern