JPS56133836A - Manufacture of oxide film on compound semiconductor surface - Google Patents
Manufacture of oxide film on compound semiconductor surfaceInfo
- Publication number
- JPS56133836A JPS56133836A JP3626180A JP3626180A JPS56133836A JP S56133836 A JPS56133836 A JP S56133836A JP 3626180 A JP3626180 A JP 3626180A JP 3626180 A JP3626180 A JP 3626180A JP S56133836 A JPS56133836 A JP S56133836A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- insulating film
- film
- semiconductor surface
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form a good insulating film having a small surface level on a compound semiconductor surface by oxidizing the insulating film after applying Al ion implantation to the compound semiconductor surface. CONSTITUTION:S ions are implanted to a p type compound semiconductor substrate 1 by consisting a photoresist film as a mask and an n<+> type source region 2 and an n<+> type drain region 3 are formed. Next, Al ions are implanted to the whole surface to form an aluminum implantation layer (Ga1-xAlxAS)5. Next, the layer 5 is oxidized by RF oxygen plasma to form a surface insulating film (Al2O3)6. Next, SiO2 7 is formed on the film 6 to open the source 2 and drain 3 and to remove the SiO2 film 7. Next, AuGeNi is evaporated by consisting the source 2 and drain 3 as electrodes. Next, Al is evaporated by using a lift off method and by composing a gate electrode 9. A good insulating film having a small surface level will be formed and an MOS element with superior characteristics will be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3626180A JPS56133836A (en) | 1980-03-24 | 1980-03-24 | Manufacture of oxide film on compound semiconductor surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3626180A JPS56133836A (en) | 1980-03-24 | 1980-03-24 | Manufacture of oxide film on compound semiconductor surface |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56133836A true JPS56133836A (en) | 1981-10-20 |
Family
ID=12464818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3626180A Pending JPS56133836A (en) | 1980-03-24 | 1980-03-24 | Manufacture of oxide film on compound semiconductor surface |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56133836A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034397A (en) * | 2008-07-30 | 2010-02-12 | Toyota Central R&D Labs Inc | Group iii nitride-based compound semiconductor substrate, and method of manufacturing the same |
-
1980
- 1980-03-24 JP JP3626180A patent/JPS56133836A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034397A (en) * | 2008-07-30 | 2010-02-12 | Toyota Central R&D Labs Inc | Group iii nitride-based compound semiconductor substrate, and method of manufacturing the same |
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