JPS56133836A - Manufacture of oxide film on compound semiconductor surface - Google Patents

Manufacture of oxide film on compound semiconductor surface

Info

Publication number
JPS56133836A
JPS56133836A JP3626180A JP3626180A JPS56133836A JP S56133836 A JPS56133836 A JP S56133836A JP 3626180 A JP3626180 A JP 3626180A JP 3626180 A JP3626180 A JP 3626180A JP S56133836 A JPS56133836 A JP S56133836A
Authority
JP
Japan
Prior art keywords
compound semiconductor
insulating film
film
semiconductor surface
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3626180A
Other languages
Japanese (ja)
Inventor
Nobutoshi Matsunaga
Susumu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3626180A priority Critical patent/JPS56133836A/en
Publication of JPS56133836A publication Critical patent/JPS56133836A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a good insulating film having a small surface level on a compound semiconductor surface by oxidizing the insulating film after applying Al ion implantation to the compound semiconductor surface. CONSTITUTION:S ions are implanted to a p type compound semiconductor substrate 1 by consisting a photoresist film as a mask and an n<+> type source region 2 and an n<+> type drain region 3 are formed. Next, Al ions are implanted to the whole surface to form an aluminum implantation layer (Ga1-xAlxAS)5. Next, the layer 5 is oxidized by RF oxygen plasma to form a surface insulating film (Al2O3)6. Next, SiO2 7 is formed on the film 6 to open the source 2 and drain 3 and to remove the SiO2 film 7. Next, AuGeNi is evaporated by consisting the source 2 and drain 3 as electrodes. Next, Al is evaporated by using a lift off method and by composing a gate electrode 9. A good insulating film having a small surface level will be formed and an MOS element with superior characteristics will be obtained.
JP3626180A 1980-03-24 1980-03-24 Manufacture of oxide film on compound semiconductor surface Pending JPS56133836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3626180A JPS56133836A (en) 1980-03-24 1980-03-24 Manufacture of oxide film on compound semiconductor surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3626180A JPS56133836A (en) 1980-03-24 1980-03-24 Manufacture of oxide film on compound semiconductor surface

Publications (1)

Publication Number Publication Date
JPS56133836A true JPS56133836A (en) 1981-10-20

Family

ID=12464818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3626180A Pending JPS56133836A (en) 1980-03-24 1980-03-24 Manufacture of oxide film on compound semiconductor surface

Country Status (1)

Country Link
JP (1) JPS56133836A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034397A (en) * 2008-07-30 2010-02-12 Toyota Central R&D Labs Inc Group iii nitride-based compound semiconductor substrate, and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034397A (en) * 2008-07-30 2010-02-12 Toyota Central R&D Labs Inc Group iii nitride-based compound semiconductor substrate, and method of manufacturing the same

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