JPS56131962A - Semiconductor device for microwave oscillation - Google Patents
Semiconductor device for microwave oscillationInfo
- Publication number
- JPS56131962A JPS56131962A JP3546080A JP3546080A JPS56131962A JP S56131962 A JPS56131962 A JP S56131962A JP 3546080 A JP3546080 A JP 3546080A JP 3546080 A JP3546080 A JP 3546080A JP S56131962 A JPS56131962 A JP S56131962A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- electrode
- fet
- constitution
- capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To integrate the capacity of positive feedback circuit for oscillation with FET in order to miniaturize the device, by covering the gate electrode with insulating film, and overlapping the drain electrode with the intermediary of insulating film. CONSTITUTION:An FET is formed in the manner that; an n type active layer 2 is overlapped on a semi-insulating GaAs substrate 1, CrPt is coated on an Al SchotKy Barrier type gate electrode 3 and AuGe/Ni film 4 for ohmic connection, while providing Au plated drain electrode 6 and source electrode 7. The exposed surface parts of the gate electrode 3 and the active layer 2 are covered by SiO2 8 and the drain electrode 6 is overlapped on the gate electrode 3 with the intermediary of the film 8. In this constitution, the capacity which combines gate and drain in microwave frequency region electrically and enable positive feedback can be obtained, and source electrode 7 is used for grounding. On gate electrode a direct bias pad 9 is provided. In this constitution, the capacity can be united with FET without increasing chip space and also can be miniaturized extremely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3546080A JPS56131962A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device for microwave oscillation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3546080A JPS56131962A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device for microwave oscillation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56131962A true JPS56131962A (en) | 1981-10-15 |
Family
ID=12442391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3546080A Pending JPS56131962A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device for microwave oscillation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56131962A (en) |
-
1980
- 1980-03-19 JP JP3546080A patent/JPS56131962A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1057411A (en) | Through-substrate source contact for microwave fet | |
| US4587541A (en) | Monolithic coplanar waveguide travelling wave transistor amplifier | |
| KR20030084657A (en) | Field-Plate MESFET | |
| GB1482337A (en) | Field effect transistor device | |
| JPS57104265A (en) | Semiconductor device | |
| JPS56131962A (en) | Semiconductor device for microwave oscillation | |
| KR840002777A (en) | Microwave wavelength effect transistor | |
| JPS5879773A (en) | Field-effect transistor | |
| JPS5732676A (en) | High power gaas field effect transistor | |
| GB1509160A (en) | Bonding pad for semiconductor device | |
| JPS5591134A (en) | Semiconductor device | |
| JPS57196603A (en) | Microwave oscillator | |
| JPS5318974A (en) | Semiconductor device for millimeter band mixer | |
| JPS5425678A (en) | Field effect transistor of ultra high frequency and high output | |
| JPS5467387A (en) | Field effect transistor | |
| JPS56100480A (en) | Electric field effect transistor | |
| JPS5498580A (en) | Field effect transistor | |
| JPS57164571A (en) | Semiconductro integrated circuit device | |
| GB1208266A (en) | Improvements in or relating to integrated circuits | |
| JPS57106082A (en) | Manufacture of schottky junction type electric field effect transistor | |
| JPS5674957A (en) | Semiconductor device | |
| JPS54101285A (en) | Dual gate field effect transistor | |
| JPS5632723A (en) | Semiconductor device | |
| JPS5790978A (en) | Field effect type transistor | |
| JPS5460866A (en) | Electric field effect transistor |