JPS5467387A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5467387A
JPS5467387A JP13450877A JP13450877A JPS5467387A JP S5467387 A JPS5467387 A JP S5467387A JP 13450877 A JP13450877 A JP 13450877A JP 13450877 A JP13450877 A JP 13450877A JP S5467387 A JPS5467387 A JP S5467387A
Authority
JP
Japan
Prior art keywords
source electrode
electrode
layer
drain
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13450877A
Other languages
Japanese (ja)
Inventor
Hideaki Kozu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13450877A priority Critical patent/JPS5467387A/en
Publication of JPS5467387A publication Critical patent/JPS5467387A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a device for high frequency and high output by providing external connecting regions for source electrode, etc. on the subsrate surface on the side opposite from at least one of external connecting regions of drain and gate electrodes.
CONSTITUTION: An n type GaAs layer 14 and a source electrode 11 and drain electrode 12 on the layer 14 are formed at the center of the surface of a semi-insulation type GaAs substrate 15, and a gate electrode 13 is making Schottky contact with the layer 14 between both electrodes. The source electrode 11 is formed thicker than the other electrode, on one main surface of the substrate. The electrodes 12, 13 have the regions 12', 13' for connecting to external circuits on the back side by passing the side face of the substrate. This FET is bonded to the heat sink 17 on the metal plate 18 to which the source electrode 11 is grounded and is wired 19 by the wiring layer 16' on an insulator 16 to the drain and gate connecting regions 12', 13' on the back side. Such practicable upside down construction enables the device for high frequency and high output to be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP13450877A 1977-11-08 1977-11-08 Field effect transistor Pending JPS5467387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13450877A JPS5467387A (en) 1977-11-08 1977-11-08 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13450877A JPS5467387A (en) 1977-11-08 1977-11-08 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5467387A true JPS5467387A (en) 1979-05-30

Family

ID=15129954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13450877A Pending JPS5467387A (en) 1977-11-08 1977-11-08 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5467387A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595212A (en) * 1991-10-01 1993-04-16 Mitsubishi Electric Corp High frequency semiconductor hybrid integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595212A (en) * 1991-10-01 1993-04-16 Mitsubishi Electric Corp High frequency semiconductor hybrid integrated circuit device

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