JPS5467387A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5467387A JPS5467387A JP13450877A JP13450877A JPS5467387A JP S5467387 A JPS5467387 A JP S5467387A JP 13450877 A JP13450877 A JP 13450877A JP 13450877 A JP13450877 A JP 13450877A JP S5467387 A JPS5467387 A JP S5467387A
- Authority
- JP
- Japan
- Prior art keywords
- source electrode
- electrode
- layer
- drain
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a device for high frequency and high output by providing external connecting regions for source electrode, etc. on the subsrate surface on the side opposite from at least one of external connecting regions of drain and gate electrodes.
CONSTITUTION: An n type GaAs layer 14 and a source electrode 11 and drain electrode 12 on the layer 14 are formed at the center of the surface of a semi-insulation type GaAs substrate 15, and a gate electrode 13 is making Schottky contact with the layer 14 between both electrodes. The source electrode 11 is formed thicker than the other electrode, on one main surface of the substrate. The electrodes 12, 13 have the regions 12', 13' for connecting to external circuits on the back side by passing the side face of the substrate. This FET is bonded to the heat sink 17 on the metal plate 18 to which the source electrode 11 is grounded and is wired 19 by the wiring layer 16' on an insulator 16 to the drain and gate connecting regions 12', 13' on the back side. Such practicable upside down construction enables the device for high frequency and high output to be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450877A JPS5467387A (en) | 1977-11-08 | 1977-11-08 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450877A JPS5467387A (en) | 1977-11-08 | 1977-11-08 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5467387A true JPS5467387A (en) | 1979-05-30 |
Family
ID=15129954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13450877A Pending JPS5467387A (en) | 1977-11-08 | 1977-11-08 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5467387A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595212A (en) * | 1991-10-01 | 1993-04-16 | Mitsubishi Electric Corp | High frequency semiconductor hybrid integrated circuit device |
-
1977
- 1977-11-08 JP JP13450877A patent/JPS5467387A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595212A (en) * | 1991-10-01 | 1993-04-16 | Mitsubishi Electric Corp | High frequency semiconductor hybrid integrated circuit device |
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