JPS56128555A - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPS56128555A JPS56128555A JP3249380A JP3249380A JPS56128555A JP S56128555 A JPS56128555 A JP S56128555A JP 3249380 A JP3249380 A JP 3249380A JP 3249380 A JP3249380 A JP 3249380A JP S56128555 A JPS56128555 A JP S56128555A
- Authority
- JP
- Japan
- Prior art keywords
- disc
- rotary
- chamber
- implanting
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3249380A JPS56128555A (en) | 1980-03-13 | 1980-03-13 | Ion implantation device |
US06/243,370 US4399365A (en) | 1980-03-13 | 1981-03-13 | Ion implant chamber for ion implantation system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3249380A JPS56128555A (en) | 1980-03-13 | 1980-03-13 | Ion implantation device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56128555A true JPS56128555A (en) | 1981-10-08 |
JPS6131590B2 JPS6131590B2 (ja) | 1986-07-21 |
Family
ID=12360512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3249380A Granted JPS56128555A (en) | 1980-03-13 | 1980-03-13 | Ion implantation device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4399365A (ja) |
JP (1) | JPS56128555A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234339A (ja) * | 1985-04-10 | 1986-10-18 | Fuji Electric Co Ltd | 液体用微粒子検出装置 |
US4794305A (en) * | 1986-05-29 | 1988-12-27 | Mitsubishi Denki Kabushiki Kaisha | Substrate support structure for ion implantation device |
JPS6427955U (ja) * | 1987-08-08 | 1989-02-17 | ||
JPS6427954U (ja) * | 1987-08-08 | 1989-02-17 | ||
JPH0193043A (ja) * | 1987-10-05 | 1989-04-12 | Nissin Electric Co Ltd | イオン処理装置 |
JP2003529217A (ja) * | 2000-03-27 | 2003-09-30 | プロテロス, エルエルシー | 移動可能なステージとファラデーカップとを用いて均一に帯電した粒子を照射する装置および方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3143527C2 (de) * | 1981-11-03 | 1984-09-20 | Bodenseewerk Gerätetechnik GmbH, 7770 Überlingen | Gerät zur automatischen Bestimmung der Nordrichtung |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55104057A (en) * | 1979-02-02 | 1980-08-09 | Hitachi Ltd | Ion implantation device |
-
1980
- 1980-03-13 JP JP3249380A patent/JPS56128555A/ja active Granted
-
1981
- 1981-03-13 US US06/243,370 patent/US4399365A/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234339A (ja) * | 1985-04-10 | 1986-10-18 | Fuji Electric Co Ltd | 液体用微粒子検出装置 |
JPH04545B2 (ja) * | 1985-04-10 | 1992-01-07 | Fuji Electric Co Ltd | |
US4794305A (en) * | 1986-05-29 | 1988-12-27 | Mitsubishi Denki Kabushiki Kaisha | Substrate support structure for ion implantation device |
JPS6427955U (ja) * | 1987-08-08 | 1989-02-17 | ||
JPS6427954U (ja) * | 1987-08-08 | 1989-02-17 | ||
JPH0723900Y2 (ja) * | 1987-08-08 | 1995-05-31 | 日新電機株式会社 | イオン処理装置 |
JPH0728690Y2 (ja) * | 1987-08-08 | 1995-06-28 | 日新電機株式会社 | イオン処理装置 |
JPH0193043A (ja) * | 1987-10-05 | 1989-04-12 | Nissin Electric Co Ltd | イオン処理装置 |
JP2003529217A (ja) * | 2000-03-27 | 2003-09-30 | プロテロス, エルエルシー | 移動可能なステージとファラデーカップとを用いて均一に帯電した粒子を照射する装置および方法 |
Also Published As
Publication number | Publication date |
---|---|
US4399365A (en) | 1983-08-16 |
JPS6131590B2 (ja) | 1986-07-21 |
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