JPS56120163A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56120163A JPS56120163A JP2354880A JP2354880A JPS56120163A JP S56120163 A JPS56120163 A JP S56120163A JP 2354880 A JP2354880 A JP 2354880A JP 2354880 A JP2354880 A JP 2354880A JP S56120163 A JPS56120163 A JP S56120163A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- layer
- layers
- drain
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce ON resistance of insulation gate FET of high pressure-resistance by providing an offset region between a channel and a drain in and on a substrate semiconductor and by laminating three or more layers of semiconductor having different conductive types between adjacent layers. CONSTITUTION:There are N<+> type source and drain 2, 3 in a P type Si substrate 1. An N<-> layer 9 and a P <-> layer 10 are piled, an N type intermediate layer 11 is provided, and thereby a gate region and an offset gate region of multilayer structure are connected, through which current is made to flow. By flowing high-resistance layers of P<-> and N<-> into offset gate regions alternately in this way, the N<-> layer is depleted between the parts of the P type Si substrate of the P layers, absorbing the rise of voltage. When the density of impurity of the P<-> layer is selected properly and the layer is depleted completely between the same and the adjacent N<-> layer at the time of rise of the drain voltage, the fall of pressure resistance of the drain due to the multilayer structure can be prevented. By this constitution, it becomes possible to increase the N<-> high-resistance layers through which current flows, to lessen the resistance of the offset gate regions and to reduce the ON resistance of the element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2354880A JPS56120163A (en) | 1980-02-27 | 1980-02-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2354880A JPS56120163A (en) | 1980-02-27 | 1980-02-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56120163A true JPS56120163A (en) | 1981-09-21 |
Family
ID=12113527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2354880A Pending JPS56120163A (en) | 1980-02-27 | 1980-02-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120163A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0634798A1 (en) * | 1993-07-12 | 1995-01-18 | Koninklijke Philips Electronics N.V. | Semiconductor device with an MOST provided with an extended drain region for high voltages |
-
1980
- 1980-02-27 JP JP2354880A patent/JPS56120163A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0634798A1 (en) * | 1993-07-12 | 1995-01-18 | Koninklijke Philips Electronics N.V. | Semiconductor device with an MOST provided with an extended drain region for high voltages |
BE1007283A3 (en) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Semiconductor device with most with an extended drain area high voltage. |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR950026034A (en) | Field-effect semiconductor device and manufacturing method thereof | |
JPS5690555A (en) | Semiconductor integrated circuit | |
JPS57141962A (en) | Semiconductor integrated circuit device | |
JPS5598872A (en) | Semiconductor device | |
FI66263C (en) | MONOLITISK HALVLEDAREANORDNING MED LAOG MAETTNADSRESISTANS | |
JPS56120163A (en) | Semiconductor device | |
JPS5745975A (en) | Input protecting device for semiconductor device | |
JPS5753944A (en) | Semiconductor integrated circuit | |
JPS54156483A (en) | Non-volatile semiconductor memory device | |
JPS56129359A (en) | Preparation of semiconductor device | |
JPS572574A (en) | Insulated gate type field effect transistor | |
JPS56118370A (en) | Semiconductor device | |
GB2212326A (en) | Reduction of soft errors in semiconductor integrated circuit | |
JPS57100764A (en) | Semiconductor device | |
JPS55103772A (en) | Semiconductor device | |
JPS5799764A (en) | Semiconductor device | |
JPS5768071A (en) | Semiconductor device with protective element | |
JPS56147446A (en) | Semiconductor integrated circuit device | |
GB2181890A (en) | Semiconductor power device | |
JPS57153461A (en) | Input protective resistor for semiconductor device | |
JPS56133871A (en) | Mos field effect semiconductor device with high breakdown voltage | |
JPS5771179A (en) | Input protective circuit device | |
JPS5772345A (en) | Semiconductor integrated circuit | |
JPS57109372A (en) | Semiconductor device | |
JPS55110056A (en) | Semiconductor device |