JPS56118366A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56118366A
JPS56118366A JP2049680A JP2049680A JPS56118366A JP S56118366 A JPS56118366 A JP S56118366A JP 2049680 A JP2049680 A JP 2049680A JP 2049680 A JP2049680 A JP 2049680A JP S56118366 A JPS56118366 A JP S56118366A
Authority
JP
Japan
Prior art keywords
mask
ions
film
layers
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2049680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360549B2 (en, 2012
Inventor
Koichi Nagasawa
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2049680A priority Critical patent/JPS56118366A/ja
Publication of JPS56118366A publication Critical patent/JPS56118366A/ja
Publication of JPS6360549B2 publication Critical patent/JPS6360549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2049680A 1980-02-22 1980-02-22 Preparation of semiconductor device Granted JPS56118366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2049680A JPS56118366A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2049680A JPS56118366A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP62266328A Division JPS63119250A (ja) 1987-10-23 1987-10-23 半導体装置の製法
JP1245104A Division JPH02119172A (ja) 1989-09-22 1989-09-22 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS56118366A true JPS56118366A (en) 1981-09-17
JPS6360549B2 JPS6360549B2 (en, 2012) 1988-11-24

Family

ID=12028762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2049680A Granted JPS56118366A (en) 1980-02-22 1980-02-22 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56118366A (en, 2012)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202660A (ja) * 1983-04-21 1984-11-16 シ−メンス・アクチエンゲゼルシヤフト 電界効果トランジスタ回路の製造方法
JPS60115257A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 半導体装置の製造方法
JPS6144456A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置の製造方法
US4626450A (en) * 1984-06-25 1986-12-02 Hitachi, Ltd. Process for producing semiconductor devices
JPS63119250A (ja) * 1987-10-23 1988-05-23 Hitachi Ltd 半導体装置の製法
JPH02206162A (ja) * 1989-02-06 1990-08-15 Matsushita Electron Corp 半導体装置の製造方法
WO1995022174A1 (en) * 1994-02-15 1995-08-17 National Semiconductor Corporation High-voltage cmos transistors for a standard cmos process
US5795809A (en) * 1995-05-25 1998-08-18 Advanced Micro Devices, Inc. Semiconductor wafer fabrication process including gettering utilizing a combined oxidation technique

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202660A (ja) * 1983-04-21 1984-11-16 シ−メンス・アクチエンゲゼルシヤフト 電界効果トランジスタ回路の製造方法
JPS60115257A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 半導体装置の製造方法
US4626450A (en) * 1984-06-25 1986-12-02 Hitachi, Ltd. Process for producing semiconductor devices
JPS6144456A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置の製造方法
JPS63119250A (ja) * 1987-10-23 1988-05-23 Hitachi Ltd 半導体装置の製法
JPH02206162A (ja) * 1989-02-06 1990-08-15 Matsushita Electron Corp 半導体装置の製造方法
WO1995022174A1 (en) * 1994-02-15 1995-08-17 National Semiconductor Corporation High-voltage cmos transistors for a standard cmos process
US5578855A (en) * 1994-02-15 1996-11-26 National Semiconductor Corporation High-voltage CMOS transistors on a standard CMOS wafer
US5789786A (en) * 1994-02-15 1998-08-04 National Semiconductor Corporation High-Voltage CMOS transistors on a standard CMOS wafer
US5795809A (en) * 1995-05-25 1998-08-18 Advanced Micro Devices, Inc. Semiconductor wafer fabrication process including gettering utilizing a combined oxidation technique

Also Published As

Publication number Publication date
JPS6360549B2 (en, 2012) 1988-11-24

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