JPS56108257A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56108257A
JPS56108257A JP993080A JP993080A JPS56108257A JP S56108257 A JPS56108257 A JP S56108257A JP 993080 A JP993080 A JP 993080A JP 993080 A JP993080 A JP 993080A JP S56108257 A JPS56108257 A JP S56108257A
Authority
JP
Japan
Prior art keywords
region
type
substrate
regions
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP993080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255308B2 (enrdf_load_stackoverflow
Inventor
Norimasa Yasui
Akira Yamamoto
Katsuro Sasaki
Osamu Takahashi
Harumi Wakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP993080A priority Critical patent/JPS56108257A/ja
Publication of JPS56108257A publication Critical patent/JPS56108257A/ja
Publication of JPS6255308B2 publication Critical patent/JPS6255308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP993080A 1980-02-01 1980-02-01 Semiconductor integrated circuit device Granted JPS56108257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP993080A JPS56108257A (en) 1980-02-01 1980-02-01 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP993080A JPS56108257A (en) 1980-02-01 1980-02-01 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56108257A true JPS56108257A (en) 1981-08-27
JPS6255308B2 JPS6255308B2 (enrdf_load_stackoverflow) 1987-11-19

Family

ID=11733775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP993080A Granted JPS56108257A (en) 1980-02-01 1980-02-01 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56108257A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852869A (ja) * 1981-09-24 1983-03-29 Nec Corp 半導体装置
JPS61500818A (ja) * 1983-12-21 1986-04-24 ハ−トマン，セドリツク ランプと該ランプを支持する支持装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852869A (ja) * 1981-09-24 1983-03-29 Nec Corp 半導体装置
JPS61500818A (ja) * 1983-12-21 1986-04-24 ハ−トマン，セドリツク ランプと該ランプを支持する支持装置

Also Published As

Publication number Publication date
JPS6255308B2 (enrdf_load_stackoverflow) 1987-11-19

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