JPS56107588A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS56107588A
JPS56107588A JP960380A JP960380A JPS56107588A JP S56107588 A JPS56107588 A JP S56107588A JP 960380 A JP960380 A JP 960380A JP 960380 A JP960380 A JP 960380A JP S56107588 A JPS56107588 A JP S56107588A
Authority
JP
Japan
Prior art keywords
layer
impurity
light emitting
type
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP960380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244717B2 (enrdf_load_stackoverflow
Inventor
Shigenobu Yamagoshi
Osamu Wada
Tatsuyuki Sanada
Masayuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP960380A priority Critical patent/JPS56107588A/ja
Publication of JPS56107588A publication Critical patent/JPS56107588A/ja
Publication of JPS6244717B2 publication Critical patent/JPS6244717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP960380A 1980-01-30 1980-01-30 Semiconductor light emitting element Granted JPS56107588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP960380A JPS56107588A (en) 1980-01-30 1980-01-30 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP960380A JPS56107588A (en) 1980-01-30 1980-01-30 Semiconductor light emitting element

Publications (2)

Publication Number Publication Date
JPS56107588A true JPS56107588A (en) 1981-08-26
JPS6244717B2 JPS6244717B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=11724878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP960380A Granted JPS56107588A (en) 1980-01-30 1980-01-30 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS56107588A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118176A (ja) * 1982-01-05 1983-07-14 Nec Corp 発光ダイオ−ド
JPS6086879A (ja) * 1983-10-19 1985-05-16 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
JPS6142177A (ja) * 1984-08-03 1986-02-28 Sumitomo Electric Ind Ltd 半導体発光素子
JPS61131582A (ja) * 1984-11-30 1986-06-19 Sanyo Electric Co Ltd 半導体レ−ザ製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118176A (ja) * 1982-01-05 1983-07-14 Nec Corp 発光ダイオ−ド
JPS6086879A (ja) * 1983-10-19 1985-05-16 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
JPS6142177A (ja) * 1984-08-03 1986-02-28 Sumitomo Electric Ind Ltd 半導体発光素子
JPS61131582A (ja) * 1984-11-30 1986-06-19 Sanyo Electric Co Ltd 半導体レ−ザ製造方法

Also Published As

Publication number Publication date
JPS6244717B2 (enrdf_load_stackoverflow) 1987-09-22

Similar Documents

Publication Publication Date Title
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
US4207586A (en) Semiconductor device having a passivating layer
GB1487808A (en) Solar cells
JPS56107588A (en) Semiconductor light emitting element
JPS57181176A (en) High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
EP0090669A3 (en) Electromagnetic radiation detector
JPS561579A (en) Semiconductor device
GB1519466A (en) Photodiode detector
JPS6451658A (en) Semiconductor device
US4914495A (en) Photodetector with player covered by N layer
JPS57184255A (en) Solar cell
JPS55130182A (en) P-n hetero junction solar battery
JPS5670675A (en) Manufacture of photoelectric converter
JPS57134960A (en) Semiconductor device
JPS56158488A (en) Semiconductor device
JPS56138959A (en) Wavelength division type solar battery
JPS55162223A (en) Semiconductor device and its preparation
Besomi et al. Photovoltaic properties of ZnSe⧸ GaAs heterojunctions
JPS54107285A (en) Semiconductor light emission diode
JPS57111070A (en) Ingaas/inp semiconductor photodetector
FR2406895A1 (fr) Photodiode a avalanche comportant une homojonction en alliage gay in1-y asx p1-x et recepteur de telecommunications optiques comportant une telle photodiode
JPS57204181A (en) Gaas solar battery and manufacture thereof
JPS55143027A (en) Semiconductor wafer
JPS5580386A (en) Manufacture of semiconductor light emitting device
JPS5736876A (en) Semiconductor photodetector