JPS56107551A - Amorphous semiconductor having chemical modification - Google Patents

Amorphous semiconductor having chemical modification

Info

Publication number
JPS56107551A
JPS56107551A JP952680A JP952680A JPS56107551A JP S56107551 A JPS56107551 A JP S56107551A JP 952680 A JP952680 A JP 952680A JP 952680 A JP952680 A JP 952680A JP S56107551 A JPS56107551 A JP S56107551A
Authority
JP
Japan
Prior art keywords
conductivity
decreasing
amorphous semiconductor
amorphous
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP952680A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219618B2 (enrdf_load_stackoverflow
Inventor
Masatoshi Tabei
Mitsuru Ikeda
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP952680A priority Critical patent/JPS56107551A/ja
Publication of JPS56107551A publication Critical patent/JPS56107551A/ja
Publication of JPH0219618B2 publication Critical patent/JPH0219618B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP952680A 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification Granted JPS56107551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP952680A JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP952680A JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Publications (2)

Publication Number Publication Date
JPS56107551A true JPS56107551A (en) 1981-08-26
JPH0219618B2 JPH0219618B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=11722704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP952680A Granted JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Country Status (1)

Country Link
JP (1) JPS56107551A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (ja) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc 太陽電池
JPS58191477A (ja) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc 太陽電池の製法
JPS5914680A (ja) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製造方法
JPS5989409A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応用反応性気体
JPS5989410A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応方法
JPS59147427A (ja) * 1983-02-10 1984-08-23 Agency Of Ind Science & Technol シリコン半導体の製法
US8115203B2 (en) 2009-01-26 2012-02-14 Massachusetts Institute Of Technology Photoconductors for mid-/far-IR detection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D.E.CARLSON AND C.R.WRONSKI=1979 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (ja) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc 太陽電池
JPS58191477A (ja) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc 太陽電池の製法
JPS5914680A (ja) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製造方法
JPS5989409A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応用反応性気体
JPS5989410A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応方法
JPS59147427A (ja) * 1983-02-10 1984-08-23 Agency Of Ind Science & Technol シリコン半導体の製法
US8115203B2 (en) 2009-01-26 2012-02-14 Massachusetts Institute Of Technology Photoconductors for mid-/far-IR detection

Also Published As

Publication number Publication date
JPH0219618B2 (enrdf_load_stackoverflow) 1990-05-02

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