JPS5610717A - Emitter-follower circuit of transistor - Google Patents
Emitter-follower circuit of transistorInfo
- Publication number
- JPS5610717A JPS5610717A JP8491979A JP8491979A JPS5610717A JP S5610717 A JPS5610717 A JP S5610717A JP 8491979 A JP8491979 A JP 8491979A JP 8491979 A JP8491979 A JP 8491979A JP S5610717 A JPS5610717 A JP S5610717A
- Authority
- JP
- Japan
- Prior art keywords
- diodes
- trq1
- lower limit
- units
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To ensure the independent setting for the working level and the lower limit level of the dynamic range, by using plural numbers of transistors and diodes among which the same electrodes are connected to each other. CONSTITUTION:The electrodes of (n) units of transistors TRQ1-Qn are connected to each other; and also the electrodes are also connected to each other for (m) units of diodes D1-Dm respectively. Then input terminal P1 is connected to the base of TRQ1-Qn; and the emitters of TRQ1-Qn and the cathodes of diodes D1-Dm are grounded via resistance R1. At the same time, the collectors of TRQ1-Qn are connected to power source VCC; and the anodes of diodes D1-Dm are connected to source VCC via resistance R2 as well as to output terminal P2. With such constitution of the circuit, the lower limit level of the dynamic range is decided by the resistance ratio R2/R1. And the working level can be varied by the number ratio n/m of the units connected in parallel. As a result, the independent setting is possible for the lower limit level and the working level each.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8491979A JPS5610717A (en) | 1979-07-06 | 1979-07-06 | Emitter-follower circuit of transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8491979A JPS5610717A (en) | 1979-07-06 | 1979-07-06 | Emitter-follower circuit of transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5610717A true JPS5610717A (en) | 1981-02-03 |
Family
ID=13844112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8491979A Pending JPS5610717A (en) | 1979-07-06 | 1979-07-06 | Emitter-follower circuit of transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5610717A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56106600U (en) * | 1980-12-18 | 1981-08-19 |
-
1979
- 1979-07-06 JP JP8491979A patent/JPS5610717A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56106600U (en) * | 1980-12-18 | 1981-08-19 |
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