JPS5694577A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5694577A
JPS5694577A JP17195279A JP17195279A JPS5694577A JP S5694577 A JPS5694577 A JP S5694577A JP 17195279 A JP17195279 A JP 17195279A JP 17195279 A JP17195279 A JP 17195279A JP S5694577 A JPS5694577 A JP S5694577A
Authority
JP
Japan
Prior art keywords
bit line
pair
transistors
dummy
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17195279A
Other languages
Japanese (ja)
Inventor
Masayoshi Kimoto
Masa Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17195279A priority Critical patent/JPS5694577A/en
Publication of JPS5694577A publication Critical patent/JPS5694577A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To increase the read-in margin, by making the level of bit line pair to the read level, through the connection of dummy cell group with dummy bit line pair by the arrangement toward bit line and the connection of the bit line pair to the base of detection transistors. CONSTITUTION:The dummy cell DC group is arranged toward the bit line B at a suitable location lengthwise the word line W, and each of them is connected to the respective word line W and common dummy bit line DB line pair. Further, this bit line DB pair is connected to the base of detection transistors T8, T10 and the voltage level of the bit line DB pair is taken as the read level RL. For example, the circuit as shown in Figure is constituted with the memory cell MC using FF consisting of multiemitter transistors Q1, Q2, dummy cell DC with the same construction, and constant current sources J1-J7 and the like, so that the transistors in o-mark are ON and those in x-mark are OFF.
JP17195279A 1979-12-28 1979-12-28 Semiconductor storage device Pending JPS5694577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17195279A JPS5694577A (en) 1979-12-28 1979-12-28 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17195279A JPS5694577A (en) 1979-12-28 1979-12-28 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5694577A true JPS5694577A (en) 1981-07-31

Family

ID=15932824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17195279A Pending JPS5694577A (en) 1979-12-28 1979-12-28 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5694577A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0100851A2 (en) * 1982-07-20 1984-02-22 Siemens Aktiengesellschaft Circuit arrangement for reading bipolar memory cells
JPS60237698A (en) * 1985-04-23 1985-11-26 Hitachi Ltd Sense circuit of semiconductor memory
JPS63122090A (en) * 1986-11-12 1988-05-26 Hitachi Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0100851A2 (en) * 1982-07-20 1984-02-22 Siemens Aktiengesellschaft Circuit arrangement for reading bipolar memory cells
JPS60237698A (en) * 1985-04-23 1985-11-26 Hitachi Ltd Sense circuit of semiconductor memory
JPH0378715B2 (en) * 1985-04-23 1991-12-16 Hitachi Ltd
JPS63122090A (en) * 1986-11-12 1988-05-26 Hitachi Ltd Semiconductor device

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