JPS5595366A - Insulated-gate field-effect transistor - Google Patents

Insulated-gate field-effect transistor

Info

Publication number
JPS5595366A
JPS5595366A JP261079A JP261079A JPS5595366A JP S5595366 A JPS5595366 A JP S5595366A JP 261079 A JP261079 A JP 261079A JP 261079 A JP261079 A JP 261079A JP S5595366 A JPS5595366 A JP S5595366A
Authority
JP
Japan
Prior art keywords
depression
gate
polycrystalline
film
wall surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP261079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159543B2 (enrdf_load_html_response
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP261079A priority Critical patent/JPS5595366A/ja
Publication of JPS5595366A publication Critical patent/JPS5595366A/ja
Publication of JPS6159543B2 publication Critical patent/JPS6159543B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP261079A 1979-01-13 1979-01-13 Insulated-gate field-effect transistor Granted JPS5595366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP261079A JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP261079A JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5595366A true JPS5595366A (en) 1980-07-19
JPS6159543B2 JPS6159543B2 (enrdf_load_html_response) 1986-12-17

Family

ID=11534157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP261079A Granted JPS5595366A (en) 1979-01-13 1979-01-13 Insulated-gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5595366A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
US4571512A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional shielded notch FET
US4622569A (en) * 1984-06-08 1986-11-11 Eaton Corporation Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287751U (enrdf_load_html_response) * 1988-12-21 1990-07-11

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US4571512A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional shielded notch FET
US4622569A (en) * 1984-06-08 1986-11-11 Eaton Corporation Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor

Also Published As

Publication number Publication date
JPS6159543B2 (enrdf_load_html_response) 1986-12-17

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