JPS5591842A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591842A
JPS5591842A JP16497378A JP16497378A JPS5591842A JP S5591842 A JPS5591842 A JP S5591842A JP 16497378 A JP16497378 A JP 16497378A JP 16497378 A JP16497378 A JP 16497378A JP S5591842 A JPS5591842 A JP S5591842A
Authority
JP
Japan
Prior art keywords
electrode
alloy
wiring
alloy film
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16497378A
Other languages
Japanese (ja)
Other versions
JPS5841766B2 (en
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16497378A priority Critical patent/JPS5841766B2/en
Publication of JPS5591842A publication Critical patent/JPS5591842A/en
Publication of JPS5841766B2 publication Critical patent/JPS5841766B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form an electrode and a wiring of fine pattern, without causing corrosion to an alloy, by patterning an Al-Cu alloy film on a semiconductor by using reactive spatter etching and exposing it to hydrogen plasma in the same device.
CONSTITUTION: A semiconductor wafer 5 containing an Al-Cu alloy film is placed on the top of an electrode 2 using a reaction chamber 1 provided with 2 parallel flat-plate-like electrodes 2 and 3, etc. By supplying the reacting chamber with an etchant gas of BCl3, CCl4, PCl3 and BBr3, etc. through a gas supplying pipe 1a and applying high frequency from a high frequency power source 4, reactive spatter etching is conducted and the Al-Cu alloy film is patterned to provide an electrode and a wiring. And then, hydrogen gas is introduced into the chamber to allow hydrogen lasma to be generated. By being exposed to the hydrogen plasma after being etched, the Al-Cu alloy can be protected from corrosion when it is taken out from the reaction chamber, and therefore, wiring breakage can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP16497378A 1978-12-28 1978-12-28 Manufacturing method of semiconductor device Expired JPS5841766B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16497378A JPS5841766B2 (en) 1978-12-28 1978-12-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16497378A JPS5841766B2 (en) 1978-12-28 1978-12-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5591842A true JPS5591842A (en) 1980-07-11
JPS5841766B2 JPS5841766B2 (en) 1983-09-14

Family

ID=15803394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16497378A Expired JPS5841766B2 (en) 1978-12-28 1978-12-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5841766B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654043A (en) * 1979-10-09 1981-05-13 Matsushita Electronics Corp Plasma etching method
JPS5830133A (en) * 1981-08-18 1983-02-22 Matsushita Electric Ind Co Ltd Plasma etching treatment
JPS61128528A (en) * 1984-11-27 1986-06-16 Matsushita Electric Ind Co Ltd Dry etching method of aluminum-silicon-copper alloy
US5380397A (en) * 1989-08-28 1995-01-10 Hitachi, Ltd. Method of treating samples

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654043A (en) * 1979-10-09 1981-05-13 Matsushita Electronics Corp Plasma etching method
JPH0127571B2 (en) * 1979-10-09 1989-05-30 Matsushita Electronics Corp
JPS5830133A (en) * 1981-08-18 1983-02-22 Matsushita Electric Ind Co Ltd Plasma etching treatment
JPS61128528A (en) * 1984-11-27 1986-06-16 Matsushita Electric Ind Co Ltd Dry etching method of aluminum-silicon-copper alloy
US5380397A (en) * 1989-08-28 1995-01-10 Hitachi, Ltd. Method of treating samples
US5556714A (en) * 1989-08-28 1996-09-17 Hitachi, Ltd. Method of treating samples
US6329298B1 (en) 1989-08-28 2001-12-11 Hitachi, Ltd. Apparatus for treating samples

Also Published As

Publication number Publication date
JPS5841766B2 (en) 1983-09-14

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