JPS5591177A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5591177A JPS5591177A JP16377978A JP16377978A JPS5591177A JP S5591177 A JPS5591177 A JP S5591177A JP 16377978 A JP16377978 A JP 16377978A JP 16377978 A JP16377978 A JP 16377978A JP S5591177 A JPS5591177 A JP S5591177A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layers
- gate
- integrated circuit
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015654 memory Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16377978A JPS5591177A (en) | 1978-12-28 | 1978-12-28 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16377978A JPS5591177A (en) | 1978-12-28 | 1978-12-28 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5591177A true JPS5591177A (en) | 1980-07-10 |
Family
ID=15780548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16377978A Pending JPS5591177A (en) | 1978-12-28 | 1978-12-28 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591177A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194372A (ja) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | 半導体メモリ素子 |
| US5592003A (en) * | 1992-12-28 | 1997-01-07 | Nippon Steel Corporation | Nonvolatile semiconductor memory and method of rewriting data thereto |
-
1978
- 1978-12-28 JP JP16377978A patent/JPS5591177A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194372A (ja) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | 半導体メモリ素子 |
| US5592003A (en) * | 1992-12-28 | 1997-01-07 | Nippon Steel Corporation | Nonvolatile semiconductor memory and method of rewriting data thereto |
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