JPS5585055A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5585055A
JPS5585055A JP15944178A JP15944178A JPS5585055A JP S5585055 A JPS5585055 A JP S5585055A JP 15944178 A JP15944178 A JP 15944178A JP 15944178 A JP15944178 A JP 15944178A JP S5585055 A JPS5585055 A JP S5585055A
Authority
JP
Japan
Prior art keywords
type
diode
gate
island
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15944178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6141153B2 (enrdf_load_stackoverflow
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15944178A priority Critical patent/JPS5585055A/ja
Publication of JPS5585055A publication Critical patent/JPS5585055A/ja
Publication of JPS6141153B2 publication Critical patent/JPS6141153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP15944178A 1978-12-21 1978-12-21 Semiconductor device Granted JPS5585055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5585055A true JPS5585055A (en) 1980-06-26
JPS6141153B2 JPS6141153B2 (enrdf_load_stackoverflow) 1986-09-12

Family

ID=15693816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15944178A Granted JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585055A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068980A (ja) * 2001-08-29 2003-03-07 Denso Corp 接合型ｆｅｔの駆動回路並びに半導体装置及びその製造方法
JP2006279608A (ja) * 2005-03-29 2006-10-12 Epson Toyocom Corp 圧電発振器
JP2011217349A (ja) * 2010-03-19 2011-10-27 Panasonic Corp 水晶発振回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068980A (ja) * 2001-08-29 2003-03-07 Denso Corp 接合型ｆｅｔの駆動回路並びに半導体装置及びその製造方法
JP2006279608A (ja) * 2005-03-29 2006-10-12 Epson Toyocom Corp 圧電発振器
JP2011217349A (ja) * 2010-03-19 2011-10-27 Panasonic Corp 水晶発振回路

Also Published As

Publication number Publication date
JPS6141153B2 (enrdf_load_stackoverflow) 1986-09-12

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