JPS5577170A - Silicon mono-crystal wafer - Google Patents
Silicon mono-crystal waferInfo
- Publication number
- JPS5577170A JPS5577170A JP15011778A JP15011778A JPS5577170A JP S5577170 A JPS5577170 A JP S5577170A JP 15011778 A JP15011778 A JP 15011778A JP 15011778 A JP15011778 A JP 15011778A JP S5577170 A JPS5577170 A JP S5577170A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- heattreatment
- temperature
- defect
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15011778A JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15011778A JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5577170A true JPS5577170A (en) | 1980-06-10 |
| JPS637025B2 JPS637025B2 (enExample) | 1988-02-15 |
Family
ID=15489851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15011778A Granted JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5577170A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856344A (ja) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4483736A (en) * | 1981-03-24 | 1984-11-20 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for producing a single crystal of a IIIb -Vb compound |
-
1978
- 1978-12-06 JP JP15011778A patent/JPS5577170A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483736A (en) * | 1981-03-24 | 1984-11-20 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for producing a single crystal of a IIIb -Vb compound |
| JPS5856344A (ja) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637025B2 (enExample) | 1988-02-15 |
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