JPS5574182A - Preparing junction type field effect transistor - Google Patents

Preparing junction type field effect transistor

Info

Publication number
JPS5574182A
JPS5574182A JP14835678A JP14835678A JPS5574182A JP S5574182 A JPS5574182 A JP S5574182A JP 14835678 A JP14835678 A JP 14835678A JP 14835678 A JP14835678 A JP 14835678A JP S5574182 A JPS5574182 A JP S5574182A
Authority
JP
Japan
Prior art keywords
area
gate
polycrystalline
type impurity
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14835678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6157714B2 (enrdf_load_stackoverflow
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kazutoshi Nagano
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14835678A priority Critical patent/JPS5574182A/ja
Publication of JPS5574182A publication Critical patent/JPS5574182A/ja
Publication of JPS6157714B2 publication Critical patent/JPS6157714B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP14835678A 1978-11-29 1978-11-29 Preparing junction type field effect transistor Granted JPS5574182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835678A JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835678A JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5574182A true JPS5574182A (en) 1980-06-04
JPS6157714B2 JPS6157714B2 (enrdf_load_stackoverflow) 1986-12-08

Family

ID=15450916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835678A Granted JPS5574182A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5574182A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor
JPH0613410A (ja) * 1992-03-18 1994-01-21 Samsung Electron Co Ltd 接合電界効果トランジスタ及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor
JPH0613410A (ja) * 1992-03-18 1994-01-21 Samsung Electron Co Ltd 接合電界効果トランジスタ及びその製造方法
US5248626A (en) * 1992-08-28 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating self-aligned gate diffused junction field effect transistor

Also Published As

Publication number Publication date
JPS6157714B2 (enrdf_load_stackoverflow) 1986-12-08

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