JPS6157714B2 - - Google Patents
Info
- Publication number
- JPS6157714B2 JPS6157714B2 JP53148356A JP14835678A JPS6157714B2 JP S6157714 B2 JPS6157714 B2 JP S6157714B2 JP 53148356 A JP53148356 A JP 53148356A JP 14835678 A JP14835678 A JP 14835678A JP S6157714 B2 JPS6157714 B2 JP S6157714B2
- Authority
- JP
- Japan
- Prior art keywords
- well
- region
- manufacturing
- polycrystalline silicon
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835678A JPS5574182A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835678A JPS5574182A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574182A JPS5574182A (en) | 1980-06-04 |
| JPS6157714B2 true JPS6157714B2 (enrdf_load_stackoverflow) | 1986-12-08 |
Family
ID=15450916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14835678A Granted JPS5574182A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574182A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5756976A (en) * | 1980-09-22 | 1982-04-05 | Nec Corp | Manufacture of junction type field effect transistor |
| KR930020712A (ko) * | 1992-03-18 | 1993-10-20 | 김광호 | 접합 전계효과트랜지스터 및 그 제조방법 |
| US5248626A (en) * | 1992-08-28 | 1993-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating self-aligned gate diffused junction field effect transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5382275A (en) * | 1976-12-28 | 1978-07-20 | Fujitsu Ltd | Production of semiconductor device |
-
1978
- 1978-11-29 JP JP14835678A patent/JPS5574182A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574182A (en) | 1980-06-04 |
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