JPS5574158A - Preparing semiconductor device - Google Patents
Preparing semiconductor deviceInfo
- Publication number
- JPS5574158A JPS5574158A JP14838678A JP14838678A JPS5574158A JP S5574158 A JPS5574158 A JP S5574158A JP 14838678 A JP14838678 A JP 14838678A JP 14838678 A JP14838678 A JP 14838678A JP S5574158 A JPS5574158 A JP S5574158A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass
- bonded
- resin film
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
PURPOSE: To effectively produce a high-quality semiconductor device by using laser to scribe the surface of a semiconductor substrate whose back face is bonded to a substrate.
CONSTITUTION: An Si substrate 1 is coated with a transparent adhesive resin film 7. A transparent glass substrate 11 is bonded to the back surface of the Si substrate 1 while pressing the sybstrate 1 a little to correct its bending. Using the glass 11 as a support, the Si substrate 1 undergoes vaccum deposition to form diode elements 6. Laser beam is irradiated on the boundary between the diodes 6 to form V grooves 8. The resin film 7 is dissolved by organic solvent to remove the glass substrate 11. Then, common methods are used for precessing. Even if laser irradiation shifts slightly to approach the glass protection layers 4 and pn-junction 1J, this construction allows produced heat to be dissipated through the glass 11. This prevents defect in reverse direction property. Such defect is also prevented by the glass 11 holding the substrate 1 in shape during scribe operation.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14838678A JPS5574158A (en) | 1978-11-29 | 1978-11-29 | Preparing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14838678A JPS5574158A (en) | 1978-11-29 | 1978-11-29 | Preparing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5574158A true JPS5574158A (en) | 1980-06-04 |
Family
ID=15451599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14838678A Pending JPS5574158A (en) | 1978-11-29 | 1978-11-29 | Preparing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574158A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005122223A1 (en) * | 2004-06-11 | 2005-12-22 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
| JP2015198142A (en) * | 2014-03-31 | 2015-11-09 | 株式会社カネカ | Crystal silicon solar battery, manufacturing method for the same and solar battery module |
-
1978
- 1978-11-29 JP JP14838678A patent/JPS5574158A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005122223A1 (en) * | 2004-06-11 | 2005-12-22 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
| JP2015198142A (en) * | 2014-03-31 | 2015-11-09 | 株式会社カネカ | Crystal silicon solar battery, manufacturing method for the same and solar battery module |
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