JPS5570024A - Electron beam exposure method - Google Patents

Electron beam exposure method

Info

Publication number
JPS5570024A
JPS5570024A JP14378878A JP14378878A JPS5570024A JP S5570024 A JPS5570024 A JP S5570024A JP 14378878 A JP14378878 A JP 14378878A JP 14378878 A JP14378878 A JP 14378878A JP S5570024 A JPS5570024 A JP S5570024A
Authority
JP
Japan
Prior art keywords
current density
area
electron beam
rectangular
projection image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14378878A
Other languages
Japanese (ja)
Other versions
JPS6129535B2 (en
Inventor
Nobuyuki Yasutake
Junichi Kai
Toru Funayama
Tadashi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14378878A priority Critical patent/JPS5570024A/en
Publication of JPS5570024A publication Critical patent/JPS5570024A/en
Publication of JPS6129535B2 publication Critical patent/JPS6129535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Abstract

PURPOSE:To obtain uniform current density distribution by adjusting the alignment device based on the current density so calculated the current density in each area inside electron beam projection image through addition and subtraction of measured current value in plural area which shares a part of the boundary of the above area. CONSTITUTION:In order to obtain average current density at the rectangular area A inside the rectangular projection image 5-2, rectangular porous image 5-2 is projected on the aperture rectangular porous image 8-1 of the and adjustment is made by means of the electron beam deflector so that the projected position may be as shown in Fig. b. In this case, mcasurement is made of total current of beam passing holes: I1=IA+IB+IC+ID. In the same way, I2=IC+ID for Fig. c, I3=IC+ID for Fig. d and I4=IB+IC for Fig. e, enabling IA=I1+I2-I3-I4 to be calculated. Average current density can be obtained through division by the area of A. By repeating the same measurement and calculation, current density in a given area inside the projection image 5-2 can be obtained and its distribution is made uniform through the adjustment by the alignment device.
JP14378878A 1978-11-21 1978-11-21 Electron beam exposure method Granted JPS5570024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14378878A JPS5570024A (en) 1978-11-21 1978-11-21 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14378878A JPS5570024A (en) 1978-11-21 1978-11-21 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS5570024A true JPS5570024A (en) 1980-05-27
JPS6129535B2 JPS6129535B2 (en) 1986-07-07

Family

ID=15346999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14378878A Granted JPS5570024A (en) 1978-11-21 1978-11-21 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS5570024A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015517734A (en) * 2012-05-14 2015-06-22 マッパー・リソグラフィー・アイピー・ビー．ブイ． Method for measuring beam position in a multi beam exposure apparatus and method for measuring the distance between two beam beams

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015517734A (en) * 2012-05-14 2015-06-22 マッパー・リソグラフィー・アイピー・ビー．ブイ． Method for measuring beam position in a multi beam exposure apparatus and method for measuring the distance between two beam beams
US9653259B2 (en) 2012-05-14 2017-05-16 Mapper Lithography Ip B.V. Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
USRE49483E1 (en) 2012-05-14 2023-04-04 Asml Netherlands B.V. Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Also Published As

Publication number Publication date
JPS6129535B2 (en) 1986-07-07

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