JPS5568637A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5568637A JPS5568637A JP14238078A JP14238078A JPS5568637A JP S5568637 A JPS5568637 A JP S5568637A JP 14238078 A JP14238078 A JP 14238078A JP 14238078 A JP14238078 A JP 14238078A JP S5568637 A JPS5568637 A JP S5568637A
- Authority
- JP
- Japan
- Prior art keywords
- film
- compound
- coated
- organic aluminum
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To stabilize the surface of a semiconductor, by coating an organic aluminum compound and thermally oxidizing or dissolving the compound to produce an aluminum oxide film on the surface of the semiconductor.
CONSTITUTION: An SiO2 film 5 on a pn-junction between the collector and base of an npn-transistor manufactured by a conventional process is selectively removed. A varnish-like solution of an organic aluminum compound is rotatively coated and then dried. The dried compound is baked under the air to produce an Al2O3 film 7 which is substantially a monomolecular film. A film 8 of polyimidoisoindoloquinazolinedione is selectively coated. Since the monomolecular Al2O3 film is charged with negative electricity of 1×1011W5×1011 atom/cm3, troubles due to the positive electricity in the film never take place. Optional one of various aluminum chelates can be used as the organic aluminum compound. The compound is dissolved to an appropriate concentration and viscosity by a volatile solvent. The solution of the compound is thinly and uniformly coated on a substrate by rotation.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238078A JPS5568637A (en) | 1978-11-20 | 1978-11-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238078A JPS5568637A (en) | 1978-11-20 | 1978-11-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5568637A true JPS5568637A (en) | 1980-05-23 |
Family
ID=15314017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14238078A Pending JPS5568637A (en) | 1978-11-20 | 1978-11-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5568637A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014099622A (en) * | 2012-07-12 | 2014-05-29 | Hitachi Chemical Co Ltd | Composition for passivation layer formation, semiconductor substrate with passivation layer, manufacturing method of semiconductor substrate with passivation layer, solar battery element, manufacturing method of solar battery element, and solar battery |
| JP2017076802A (en) * | 2012-01-06 | 2017-04-20 | 日立化成株式会社 | Passivation film-attached semiconductor substrate and manufacturing method therefor, and solar battery element and manufacturing method therefor |
| JP2017195377A (en) * | 2017-05-19 | 2017-10-26 | 日立化成株式会社 | Composition for formation of semiconductor substrate passivation film, semiconductor substrate with passivation film, method for manufacturing the same, solar battery device and method for manufacturing the same |
-
1978
- 1978-11-20 JP JP14238078A patent/JPS5568637A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017076802A (en) * | 2012-01-06 | 2017-04-20 | 日立化成株式会社 | Passivation film-attached semiconductor substrate and manufacturing method therefor, and solar battery element and manufacturing method therefor |
| JP2014099622A (en) * | 2012-07-12 | 2014-05-29 | Hitachi Chemical Co Ltd | Composition for passivation layer formation, semiconductor substrate with passivation layer, manufacturing method of semiconductor substrate with passivation layer, solar battery element, manufacturing method of solar battery element, and solar battery |
| JP2017195377A (en) * | 2017-05-19 | 2017-10-26 | 日立化成株式会社 | Composition for formation of semiconductor substrate passivation film, semiconductor substrate with passivation film, method for manufacturing the same, solar battery device and method for manufacturing the same |
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