JPS5565481A - Manufacture of high-frequency diode - Google Patents
Manufacture of high-frequency diodeInfo
- Publication number
- JPS5565481A JPS5565481A JP13895278A JP13895278A JPS5565481A JP S5565481 A JPS5565481 A JP S5565481A JP 13895278 A JP13895278 A JP 13895278A JP 13895278 A JP13895278 A JP 13895278A JP S5565481 A JPS5565481 A JP S5565481A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- type
- unstableness
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895278A JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895278A JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5565481A true JPS5565481A (en) | 1980-05-16 |
| JPS6118874B2 JPS6118874B2 (enrdf_load_stackoverflow) | 1986-05-14 |
Family
ID=15233986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13895278A Granted JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5565481A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077306A1 (en) * | 2002-03-08 | 2003-09-18 | Sankan Electric Co., Ltd. | Semiconductor device and its manufacturing method |
| JP2005340484A (ja) * | 2004-05-27 | 2005-12-08 | Renesas Technology Corp | 半導体装置及びその製造方法 |
-
1978
- 1978-11-13 JP JP13895278A patent/JPS5565481A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003077306A1 (en) * | 2002-03-08 | 2003-09-18 | Sankan Electric Co., Ltd. | Semiconductor device and its manufacturing method |
| JP2005340484A (ja) * | 2004-05-27 | 2005-12-08 | Renesas Technology Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118874B2 (enrdf_load_stackoverflow) | 1986-05-14 |
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