JPS6118874B2 - - Google Patents
Info
- Publication number
- JPS6118874B2 JPS6118874B2 JP13895278A JP13895278A JPS6118874B2 JP S6118874 B2 JPS6118874 B2 JP S6118874B2 JP 13895278 A JP13895278 A JP 13895278A JP 13895278 A JP13895278 A JP 13895278A JP S6118874 B2 JPS6118874 B2 JP S6118874B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- mesa
- layer
- semiconductor layer
- junction capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895278A JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895278A JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5565481A JPS5565481A (en) | 1980-05-16 |
| JPS6118874B2 true JPS6118874B2 (enrdf_load_stackoverflow) | 1986-05-14 |
Family
ID=15233986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13895278A Granted JPS5565481A (en) | 1978-11-13 | 1978-11-13 | Manufacture of high-frequency diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5565481A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI241028B (en) * | 2002-03-08 | 2005-10-01 | Sanken Electric Co Ltd | Semiconductor device and its manufacturing method |
| JP2005340484A (ja) * | 2004-05-27 | 2005-12-08 | Renesas Technology Corp | 半導体装置及びその製造方法 |
-
1978
- 1978-11-13 JP JP13895278A patent/JPS5565481A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5565481A (en) | 1980-05-16 |
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