Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP12767675ApriorityCriticalpatent/JPS5251877A/en
Publication of JPS5251877ApublicationCriticalpatent/JPS5251877A/en
PURPOSE: To obtain uniform junction having less defective structure near PN junction and improve the characteristics of a semiconductor device by employing guard ring diffusion and a poly Si layer by vapor growth method.
COPYRIGHT: (C)1977,JPO&Japio
JP12767675A1975-10-231975-10-23Production of semiconductor device
PendingJPS5251877A
(en)