JPS5563864A - Semiconductor device with electrode - Google Patents

Semiconductor device with electrode

Info

Publication number
JPS5563864A
JPS5563864A JP13713078A JP13713078A JPS5563864A JP S5563864 A JPS5563864 A JP S5563864A JP 13713078 A JP13713078 A JP 13713078A JP 13713078 A JP13713078 A JP 13713078A JP S5563864 A JPS5563864 A JP S5563864A
Authority
JP
Japan
Prior art keywords
aluminium
silicon
electrode
layer
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13713078A
Other languages
Japanese (ja)
Other versions
JPS5827672B2 (en
Inventor
Minoru Takahashi
Takemi Ueki
Misako Ogiwara
Toshio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP53137130A priority Critical patent/JPS5827672B2/en
Publication of JPS5563864A publication Critical patent/JPS5563864A/en
Publication of JPS5827672B2 publication Critical patent/JPS5827672B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent aluminium from invading into silicon, by providing an electrode consisting of an aluminium layer and a platinum and silicide layer whose matrix is a polycrystalline silicon on the electrode connection part of a silicon semiconductor substrate.
CONSTITUTION: An N-type semiconductor region 7 and a silicon oxide film 9 are produced on a P-type silicon semiconductor layer 4. An opening 8 for an electrode is provided. The electrode 3 consists of a platinum and silicide layer 10 whose matrix is a polycrystalline silicon and which is ohmic-connected to a silicon semiconductor substrate 1, a platinum-aluminium intermetallic compound layer 11 and an aluminium layer 12, for example. Although the aluminium is used as an electrode material, the aluminium does not react with the silicon to invade into it when the semiconductor substrate is treated with heat. This results in dispensing with an expensive metal.
COPYRIGHT: (C)1980,JPO&Japio
JP53137130A 1978-11-07 1978-11-07 Semiconductor device with electrodes Expired JPS5827672B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53137130A JPS5827672B2 (en) 1978-11-07 1978-11-07 Semiconductor device with electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53137130A JPS5827672B2 (en) 1978-11-07 1978-11-07 Semiconductor device with electrodes

Publications (2)

Publication Number Publication Date
JPS5563864A true JPS5563864A (en) 1980-05-14
JPS5827672B2 JPS5827672B2 (en) 1983-06-10

Family

ID=15191513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53137130A Expired JPS5827672B2 (en) 1978-11-07 1978-11-07 Semiconductor device with electrodes

Country Status (1)

Country Link
JP (1) JPS5827672B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3574680A (en) * 1968-05-07 1971-04-13 Ibm High-low ohmic contact deposition method
JPS5113610A (en) * 1974-07-19 1976-02-03 Asahi Chemical Ind Hiryobotono uchikomisochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3574680A (en) * 1968-05-07 1971-04-13 Ibm High-low ohmic contact deposition method
JPS5113610A (en) * 1974-07-19 1976-02-03 Asahi Chemical Ind Hiryobotono uchikomisochi

Also Published As

Publication number Publication date
JPS5827672B2 (en) 1983-06-10

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