JPS5563864A - Semiconductor device with electrode - Google Patents
Semiconductor device with electrodeInfo
- Publication number
- JPS5563864A JPS5563864A JP13713078A JP13713078A JPS5563864A JP S5563864 A JPS5563864 A JP S5563864A JP 13713078 A JP13713078 A JP 13713078A JP 13713078 A JP13713078 A JP 13713078A JP S5563864 A JPS5563864 A JP S5563864A
- Authority
- JP
- Japan
- Prior art keywords
- aluminium
- silicon
- electrode
- layer
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent aluminium from invading into silicon, by providing an electrode consisting of an aluminium layer and a platinum and silicide layer whose matrix is a polycrystalline silicon on the electrode connection part of a silicon semiconductor substrate.
CONSTITUTION: An N-type semiconductor region 7 and a silicon oxide film 9 are produced on a P-type silicon semiconductor layer 4. An opening 8 for an electrode is provided. The electrode 3 consists of a platinum and silicide layer 10 whose matrix is a polycrystalline silicon and which is ohmic-connected to a silicon semiconductor substrate 1, a platinum-aluminium intermetallic compound layer 11 and an aluminium layer 12, for example. Although the aluminium is used as an electrode material, the aluminium does not react with the silicon to invade into it when the semiconductor substrate is treated with heat. This results in dispensing with an expensive metal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53137130A JPS5827672B2 (en) | 1978-11-07 | 1978-11-07 | Semiconductor device with electrodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53137130A JPS5827672B2 (en) | 1978-11-07 | 1978-11-07 | Semiconductor device with electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5563864A true JPS5563864A (en) | 1980-05-14 |
JPS5827672B2 JPS5827672B2 (en) | 1983-06-10 |
Family
ID=15191513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53137130A Expired JPS5827672B2 (en) | 1978-11-07 | 1978-11-07 | Semiconductor device with electrodes |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5827672B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3574680A (en) * | 1968-05-07 | 1971-04-13 | Ibm | High-low ohmic contact deposition method |
JPS5113610A (en) * | 1974-07-19 | 1976-02-03 | Asahi Chemical Ind | Hiryobotono uchikomisochi |
-
1978
- 1978-11-07 JP JP53137130A patent/JPS5827672B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3574680A (en) * | 1968-05-07 | 1971-04-13 | Ibm | High-low ohmic contact deposition method |
JPS5113610A (en) * | 1974-07-19 | 1976-02-03 | Asahi Chemical Ind | Hiryobotono uchikomisochi |
Also Published As
Publication number | Publication date |
---|---|
JPS5827672B2 (en) | 1983-06-10 |
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