JPS54162961A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54162961A JPS54162961A JP7253078A JP7253078A JPS54162961A JP S54162961 A JPS54162961 A JP S54162961A JP 7253078 A JP7253078 A JP 7253078A JP 7253078 A JP7253078 A JP 7253078A JP S54162961 A JPS54162961 A JP S54162961A
- Authority
- JP
- Japan
- Prior art keywords
- alloy reaction
- featuring
- layer
- reaction layer
- ohmic performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To realize the steady DC amplification factor with a wide safe operation region ensured by forming the alloy reaction layer featuring a high ohmic performance and the alloy reaction layer featuring a low ohmic performance around the first reaction layer via the alloy reaction of Si and Al.
CONSTITUTION: Oxide film window 11 for emitter electrode is formed larger in size than N+-layer 4 and reaching near the emitter-base junction. Then base electrode 7 and emitter electrode 8 are evaporated with removal of Al at the undesired areas. After this, the Si-Al alloy reaction is given to from alloy reaction layer 9 featuring a high ohmic performance, and at the same time alloy reaction layer 12 featuring a low ohmic performance is formed around layer 9. As a result, the steady DC amplification factor can be secured with a wide safe operation ensured.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7253078A JPS54162961A (en) | 1978-06-14 | 1978-06-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7253078A JPS54162961A (en) | 1978-06-14 | 1978-06-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54162961A true JPS54162961A (en) | 1979-12-25 |
Family
ID=13491981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7253078A Pending JPS54162961A (en) | 1978-06-14 | 1978-06-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162961A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0390438U (en) * | 1989-12-28 | 1991-09-13 |
-
1978
- 1978-06-14 JP JP7253078A patent/JPS54162961A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0390438U (en) * | 1989-12-28 | 1991-09-13 |
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