JPS54162961A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54162961A
JPS54162961A JP7253078A JP7253078A JPS54162961A JP S54162961 A JPS54162961 A JP S54162961A JP 7253078 A JP7253078 A JP 7253078A JP 7253078 A JP7253078 A JP 7253078A JP S54162961 A JPS54162961 A JP S54162961A
Authority
JP
Japan
Prior art keywords
alloy reaction
featuring
layer
reaction layer
ohmic performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7253078A
Other languages
Japanese (ja)
Inventor
Koichi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7253078A priority Critical patent/JPS54162961A/en
Publication of JPS54162961A publication Critical patent/JPS54162961A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To realize the steady DC amplification factor with a wide safe operation region ensured by forming the alloy reaction layer featuring a high ohmic performance and the alloy reaction layer featuring a low ohmic performance around the first reaction layer via the alloy reaction of Si and Al.
CONSTITUTION: Oxide film window 11 for emitter electrode is formed larger in size than N+-layer 4 and reaching near the emitter-base junction. Then base electrode 7 and emitter electrode 8 are evaporated with removal of Al at the undesired areas. After this, the Si-Al alloy reaction is given to from alloy reaction layer 9 featuring a high ohmic performance, and at the same time alloy reaction layer 12 featuring a low ohmic performance is formed around layer 9. As a result, the steady DC amplification factor can be secured with a wide safe operation ensured.
COPYRIGHT: (C)1979,JPO&Japio
JP7253078A 1978-06-14 1978-06-14 Semiconductor device Pending JPS54162961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7253078A JPS54162961A (en) 1978-06-14 1978-06-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7253078A JPS54162961A (en) 1978-06-14 1978-06-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54162961A true JPS54162961A (en) 1979-12-25

Family

ID=13491981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7253078A Pending JPS54162961A (en) 1978-06-14 1978-06-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54162961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390438U (en) * 1989-12-28 1991-09-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390438U (en) * 1989-12-28 1991-09-13

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