JPS5563859A - Field-effect transistor integrated circuit - Google Patents
Field-effect transistor integrated circuitInfo
- Publication number
- JPS5563859A JPS5563859A JP13752578A JP13752578A JPS5563859A JP S5563859 A JPS5563859 A JP S5563859A JP 13752578 A JP13752578 A JP 13752578A JP 13752578 A JP13752578 A JP 13752578A JP S5563859 A JPS5563859 A JP S5563859A
- Authority
- JP
- Japan
- Prior art keywords
- field
- effect transistor
- integrated circuit
- electrodes
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13752578A JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13752578A JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563859A true JPS5563859A (en) | 1980-05-14 |
| JPS6211512B2 JPS6211512B2 (cs) | 1987-03-12 |
Family
ID=15200707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13752578A Granted JPS5563859A (en) | 1978-11-08 | 1978-11-08 | Field-effect transistor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563859A (cs) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55111179A (en) * | 1979-02-13 | 1980-08-27 | Thomson Csf | Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit |
| JPS55134955A (en) * | 1979-04-09 | 1980-10-21 | Nec Corp | Gaas integrated circuit |
| JPS58143562A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | GaAs集積回路 |
| JPS63311752A (ja) * | 1987-06-15 | 1988-12-20 | Matsushita Electronics Corp | 半導体集積回路装置 |
-
1978
- 1978-11-08 JP JP13752578A patent/JPS5563859A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55111179A (en) * | 1979-02-13 | 1980-08-27 | Thomson Csf | Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit |
| JPS55134955A (en) * | 1979-04-09 | 1980-10-21 | Nec Corp | Gaas integrated circuit |
| JPS58143562A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | GaAs集積回路 |
| JPS63311752A (ja) * | 1987-06-15 | 1988-12-20 | Matsushita Electronics Corp | 半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211512B2 (cs) | 1987-03-12 |
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