JPS5561028A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5561028A
JPS5561028A JP13413878A JP13413878A JPS5561028A JP S5561028 A JPS5561028 A JP S5561028A JP 13413878 A JP13413878 A JP 13413878A JP 13413878 A JP13413878 A JP 13413878A JP S5561028 A JPS5561028 A JP S5561028A
Authority
JP
Japan
Prior art keywords
edge
adhesion
taper
low
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13413878A
Other languages
Japanese (ja)
Other versions
JPS5645296B2 (en
Inventor
Takaaki Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13413878A priority Critical patent/JPS5561028A/en
Publication of JPS5561028A publication Critical patent/JPS5561028A/en
Publication of JPS5645296B2 publication Critical patent/JPS5645296B2/ja
Granted legal-status Critical Current

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Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To provide a taper etching or to make a fine pattern of sharp edge on a glass film using a etching liquid of ammonium fluoride or hydrofluoric acid series in which concentration of hydrogen ion is adjusted with addtion of acid amide.
CONSTITUTION: Concentration of hydrogen ion PH is related closely with adhesion between a photoresist film and a glass film. When the PH is high, the adhesion is improved and the pattern edge becomes sharp, and when it is low, the adhesion becomes lower and a taper comes out on the edge. The PH is increased by adding acid amide of formamide etc. as a PH adjusting reagent into a etching liquid of ammonium fluoride or hydrofluoric acid series. When a PSG contained P in high concentration is etched with the liquid, the pattern edge becomes extremely sharppen and a fine pattern is obtained, and for the PSG being low P, it is possible to put a taper on the pattern edge on a treatment with the etching liquid having low PH.
COPYRIGHT: (C)1980,JPO&Japio
JP13413878A 1978-10-31 1978-10-31 Preparation of semiconductor device Granted JPS5561028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13413878A JPS5561028A (en) 1978-10-31 1978-10-31 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13413878A JPS5561028A (en) 1978-10-31 1978-10-31 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5561028A true JPS5561028A (en) 1980-05-08
JPS5645296B2 JPS5645296B2 (en) 1981-10-26

Family

ID=15121352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13413878A Granted JPS5561028A (en) 1978-10-31 1978-10-31 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5561028A (en)

Also Published As

Publication number Publication date
JPS5645296B2 (en) 1981-10-26

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