JPS5550660A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5550660A JPS5550660A JP12262778A JP12262778A JPS5550660A JP S5550660 A JPS5550660 A JP S5550660A JP 12262778 A JP12262778 A JP 12262778A JP 12262778 A JP12262778 A JP 12262778A JP S5550660 A JPS5550660 A JP S5550660A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- mask
- silicon layer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262778A JPS5550660A (en) | 1978-10-06 | 1978-10-06 | Manufacturing of semiconductor device |
| US06/078,783 US4309224A (en) | 1978-10-06 | 1979-09-25 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262778A JPS5550660A (en) | 1978-10-06 | 1978-10-06 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550660A true JPS5550660A (en) | 1980-04-12 |
| JPS6152987B2 JPS6152987B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Family
ID=14840637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12262778A Granted JPS5550660A (en) | 1978-10-06 | 1978-10-06 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550660A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179582U (enrdf_load_stackoverflow) * | 1988-06-10 | 1989-12-22 | ||
| JPH0421520U (enrdf_load_stackoverflow) * | 1990-06-14 | 1992-02-24 |
-
1978
- 1978-10-06 JP JP12262778A patent/JPS5550660A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152987B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5492175A (en) | Manufacture of semiconductor device | |
| JPS5550660A (en) | Manufacturing of semiconductor device | |
| JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| KR920007124A (ko) | 폴리 에미터 바이폴라 트랜지스터의 제조방법 | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS5550661A (en) | Insulated gate type field effect semiconductor device | |
| JPS5541738A (en) | Preparation of semiconductor device | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS5780768A (en) | Semiconductor device | |
| JPS55105332A (en) | Manufacture of semiconductor device | |
| JPS5550662A (en) | Manufacturing of mos-type semiconductor device | |
| JPS5459873A (en) | Production of semiconductor device | |
| JPS5559738A (en) | Preparation of semiconductor device | |
| JPS5544779A (en) | Producing method for mos semiconductor device | |
| JPS5773977A (en) | Manufacture of semiconductor device | |
| JPS6465874A (en) | Manufacture of semiconductor device | |
| JPS5578566A (en) | Manufacture of semiconductor device | |
| JPS54116185A (en) | Manufacture for semiconductor device | |
| JPS55157242A (en) | Manufacture of semiconductor device | |
| JPS5518042A (en) | Method of fabricating semiconductor device | |
| JPS5610945A (en) | Manufacture of semiconductor device | |
| JPS553614A (en) | Insulating gate type fet device and its manufacturing method |