JPS5548958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5548958A
JPS5548958A JP12182878A JP12182878A JPS5548958A JP S5548958 A JPS5548958 A JP S5548958A JP 12182878 A JP12182878 A JP 12182878A JP 12182878 A JP12182878 A JP 12182878A JP S5548958 A JPS5548958 A JP S5548958A
Authority
JP
Japan
Prior art keywords
type
regions
region
separation region
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12182878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146972B2 (enrdf_load_stackoverflow
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12182878A priority Critical patent/JPS5548958A/ja
Publication of JPS5548958A publication Critical patent/JPS5548958A/ja
Publication of JPS6146972B2 publication Critical patent/JPS6146972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP12182878A 1978-10-02 1978-10-02 Semiconductor device Granted JPS5548958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12182878A JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12182878A JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5548958A true JPS5548958A (en) 1980-04-08
JPS6146972B2 JPS6146972B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=14820925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12182878A Granted JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5548958A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893291A (ja) * 1981-11-30 1983-06-02 Fuji Electric Corp Res & Dev Ltd 集積回路用ダイオ−ド
JPS602557A (ja) * 1983-03-01 1985-01-08 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド シ−ト材料を断続的に前進させる装置及び方法
JPS6165060U (enrdf_load_stackoverflow) * 1984-10-05 1986-05-02
JPS62204357U (enrdf_load_stackoverflow) * 1986-06-18 1987-12-26
JPH02370A (ja) * 1987-10-27 1990-01-05 Nec Corp 集積回路装置
JP2008186920A (ja) * 2007-01-29 2008-08-14 Mitsubishi Electric Corp 半導体装置
JP2020007136A (ja) * 2018-07-12 2020-01-16 本田技研工業株式会社 シート体の切断方法及びその切断装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893291A (ja) * 1981-11-30 1983-06-02 Fuji Electric Corp Res & Dev Ltd 集積回路用ダイオ−ド
JPS602557A (ja) * 1983-03-01 1985-01-08 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド シ−ト材料を断続的に前進させる装置及び方法
JPS6165060U (enrdf_load_stackoverflow) * 1984-10-05 1986-05-02
JPS62204357U (enrdf_load_stackoverflow) * 1986-06-18 1987-12-26
JPH02370A (ja) * 1987-10-27 1990-01-05 Nec Corp 集積回路装置
JP2008186920A (ja) * 2007-01-29 2008-08-14 Mitsubishi Electric Corp 半導体装置
JP2020007136A (ja) * 2018-07-12 2020-01-16 本田技研工業株式会社 シート体の切断方法及びその切断装置

Also Published As

Publication number Publication date
JPS6146972B2 (enrdf_load_stackoverflow) 1986-10-16

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